Diode Reverse Recovery and its Effect on Switching Losses
Diode Reverse Recovery and its Effect on Switching Losses
Diode Reverse Recovery and its Effect on Switching Losses
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
Turn On Loss Due to <str<strong>on</strong>g>Diode</str<strong>on</strong>g> <str<strong>on</strong>g>Recovery</str<strong>on</strong>g> (Phase t B )<br />
V CE<br />
t F = t B<br />
dI C /dt<br />
dI F /dt<br />
t 0<br />
I C<br />
I RRM<br />
t A t B<br />
t F<br />
V F<br />
I F<br />
V RM<br />
I RRM<br />
At t=t o IGBT turns <strong>on</strong><br />
t R<br />
t 1 t 2 t 3<br />
I L assumed c<strong>on</strong>stant during switching time<br />
⎛ I<br />
E =<br />
L<br />
I<br />
RRM<br />
⎞<br />
<strong>on</strong>3<br />
V<br />
out * ⎜ + ⎟ * tB<br />
⎝ 2 3 ⎠<br />
switching time: t R +t A +t B<br />
V out I RRM t<br />
<str<strong>on</strong>g>Diode</str<strong>on</strong>g> loss = * *<br />
6<br />
B<br />
8