HiSIM-SOI - TechConnect World

More documents

Recommendations

Info

I d -V d Comparison with Measurements gds gds’ gds’’ V sub = 0.0V V sub = 0.0V V sub = 0.0V V sub = 0.0V V sub = -1.5V V sub = -1.5V V sub = -1.5V V sub = -1.5V measurement HiSIM-SOI HiSIM 22
I d -V d Characteristics as a function of N SOI W g =0.25mm, L g =0.15mm N SOI (cm -3 ) = 1.0e16 2.0e16 5.0e16 Vds Vds Vds Vds Vds Vds Ids Ids Ids Ids Ids Ids Ids 1.0e17 2.0e17 5.0e17 Ids Ids 1.0e18 2.0e18 5.0e18 Vds Vds Vds enhanced floating body effect with increased N SOI HiSIM 23
Page 1 and 2: Complete Surface-Potential Modeling
Page 3 and 4: Property of Surface-Potential Model
Page 5 and 6: Specific Feature of Surface-potenti
Page 7 and 8: Current Derivatives for 45nm Techno
Page 9 and 10: Requirements for RF Applications Ha
Page 11 and 12: Descendant of MOSFET MG-MOSFET SOTB
Page 13 and 14: SOI-MOSFET Modeling many possible c
Page 15 and 16: Smooth Transition among Conditions
Page 17 and 18: Potential Distribution in Thin-Body
Page 19 and 20: Floating-Body Effect φ b.SOI is un
Page 21: History Effect Transient Characteri
Page 25 and 26: HiSIM-SOI - Considering all possibl
Page 27 and 28: Potential Dependence on T si and N
Page 29 and 30: Carrier Traps in TFT Source Gate Dr
Page 31 and 32: I-V characteristics 6.0 measurement
Page 33 and 34: Potential Drop in Drift symbol: HiS
Page 35 and 36: Current-Voltage Characteristics Rel
Page 37 and 38: N base Dependence of I-V Characteri

HiSIM-SOI - TechConnect World

Create successful ePaper yourself

Delete template?

Save as template?