HiSIM-SOI - TechConnect World

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HiSIM-HV a few hundred volts > Bias Range > a few volts modeling MOSFET + Resistor HiSIM 32
Potential Drop in Drift symbol: HiSIM‐HV line: 2D‐Device N drift =10 17 cm ‐3 : low resistive N drift =10 16 cm ‐3 : high resistive : without resistance HiSIM 33
Page 1 and 2: Complete Surface-Potential Modeling
Page 3 and 4: Property of Surface-Potential Model
Page 5 and 6: Specific Feature of Surface-potenti
Page 7 and 8: Current Derivatives for 45nm Techno
Page 9 and 10: Requirements for RF Applications Ha
Page 11 and 12: Descendant of MOSFET MG-MOSFET SOTB
Page 13 and 14: SOI-MOSFET Modeling many possible c
Page 15 and 16: Smooth Transition among Conditions
Page 17 and 18: Potential Distribution in Thin-Body
Page 19 and 20: Floating-Body Effect φ b.SOI is un
Page 21 and 22: History Effect Transient Characteri
Page 23 and 24: I d -V d Characteristics as a funct
Page 25 and 26: HiSIM-SOI - Considering all possibl
Page 27 and 28: Potential Dependence on T si and N
Page 29 and 30: Carrier Traps in TFT Source Gate Dr
Page 31: I-V characteristics 6.0 measurement
Page 35 and 36: Current-Voltage Characteristics Rel
Page 37 and 38: N base Dependence of I-V Characteri

HiSIM-SOI - TechConnect World

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