HiSIM-SOI - TechConnect World

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Modeling of Trap Density Grain Boundaries Poly-Si film Traps uniformly distributed in crystal Si Simplified Model for Density of States Log(Density of States) Tail States Donor-type Acceptor-type Log(Density of States) Donor-type ⎛ EV − E g D E = gC1 exp⎜ ⎝ Es ( ) ⎟ ⎠ ⎞ Acceptor-type ⎛ E − EC ⎞ ( E) = g exp ⎟ ⎠ g A C1 ⎜ ⎝ Es E V Deep States E C E V E C Add into the Poisson equation <strong>HiSIM</strong> 30
I-V characteristics 6.0 measurements simulations L=2μm 1.E+00 Ids(a.u.) 4.0 2.0 L=2μm Ids(a.u.) 1.E-02 1.E-04 1.E-06 1.E-08 measurements simulations 0.0 0 1 Vds(V) 2 3 1.E-10 -5 -3 -1 1 3 5 Vgs(V) Ids(a.u.) 5.0 4.0 3.0 2.0 1.0 measurements simulations L=0.5μm Ids(a.u.) L=0.5μm 1.E+00 1.E-02 1.E-04 1.E-06 1.E-08 measurements simulations 0.0 0 1 Vds(V) 2 3 1.E-10 -5 -3 -1 1 3 5 Vgs(V) S. Miyano et al., Proc. SISPAD, 2008. <strong>HiSIM</strong> 31
Page 1 and 2: Complete Surface-Potential Modeling
Page 3 and 4: Property of Surface-Potential Model
Page 5 and 6: Specific Feature of Surface-potenti
Page 7 and 8: Current Derivatives for 45nm Techno
Page 9 and 10: Requirements for RF Applications Ha
Page 11 and 12: Descendant of MOSFET MG-MOSFET SOTB
Page 13 and 14: SOI-MOSFET Modeling many possible c
Page 15 and 16: Smooth Transition among Conditions
Page 17 and 18: Potential Distribution in Thin-Body
Page 19 and 20: Floating-Body Effect φ b.SOI is un
Page 21 and 22: History Effect Transient Characteri
Page 23 and 24: I d -V d Characteristics as a funct
Page 25 and 26: HiSIM-SOI - Considering all possibl
Page 27 and 28: Potential Dependence on T si and N
Page 29: Carrier Traps in TFT Source Gate Dr
Page 33 and 34: Potential Drop in Drift symbol: HiS
Page 35 and 36: Current-Voltage Characteristics Rel
Page 37 and 38: N base Dependence of I-V Characteri

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