HiSIM-SOI - TechConnect World

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Model Extraction for 45nm Technology W g /L g =2μm/200nm W g /L g =2μm/40nm Measurement HiSIM2 one model for any device sizes without binning HiSIM 6
Current Derivatives for 45nm Technology Measurement HiSIM W g /L g = 2μm/40nm Beyond the 45nm generation nonphysical effects are getting obvious. HiSIM 7
Page 1 and 2: Complete Surface-Potential Modeling
Page 3 and 4: Property of Surface-Potential Model
Page 5: Specific Feature of Surface-potenti
Page 9 and 10: Requirements for RF Applications Ha
Page 11 and 12: Descendant of MOSFET MG-MOSFET SOTB
Page 13 and 14: SOI-MOSFET Modeling many possible c
Page 15 and 16: Smooth Transition among Conditions
Page 17 and 18: Potential Distribution in Thin-Body
Page 19 and 20: Floating-Body Effect φ b.SOI is un
Page 21 and 22: History Effect Transient Characteri
Page 23 and 24: I d -V d Characteristics as a funct
Page 25 and 26: HiSIM-SOI - Considering all possibl
Page 27 and 28: Potential Dependence on T si and N
Page 29 and 30: Carrier Traps in TFT Source Gate Dr
Page 31 and 32: I-V characteristics 6.0 measurement
Page 33 and 34: Potential Drop in Drift symbol: HiS
Page 35 and 36: Current-Voltage Characteristics Rel
Page 37 and 38: N base Dependence of I-V Characteri

HiSIM-SOI - TechConnect World

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