HiSIM-SOI - TechConnect World

More documents

Recommendations

Info

HiSIM-IGBT: Bias Range > 500V Schematic structure of a modern trench-IGBT Jn n - (base) Simplified circuit diagram of the HiSIM-IGBT model Consistent potential extension in HiSIM-IGBT is achieved by calculation based on Kirchhoff’s law. HiSIM 36
N base Dependence of I-V Characteristics M. Miyake et al., IEEE PESC, pp. 998-1003, June 2008. HiSIM 37
Page 1 and 2: Complete Surface-Potential Modeling
Page 3 and 4: Property of Surface-Potential Model
Page 5 and 6: Specific Feature of Surface-potenti
Page 7 and 8: Current Derivatives for 45nm Techno
Page 9 and 10: Requirements for RF Applications Ha
Page 11 and 12: Descendant of MOSFET MG-MOSFET SOTB
Page 13 and 14: SOI-MOSFET Modeling many possible c
Page 15 and 16: Smooth Transition among Conditions
Page 17 and 18: Potential Distribution in Thin-Body
Page 19 and 20: Floating-Body Effect φ b.SOI is un
Page 21 and 22: History Effect Transient Characteri
Page 23 and 24: I d -V d Characteristics as a funct
Page 25 and 26: HiSIM-SOI - Considering all possibl
Page 27 and 28: Potential Dependence on T si and N
Page 29 and 30: Carrier Traps in TFT Source Gate Dr
Page 31 and 32: I-V characteristics 6.0 measurement
Page 33 and 34: Potential Drop in Drift symbol: HiS
Page 35: Current-Voltage Characteristics Rel

HiSIM-SOI - TechConnect World

Create successful ePaper yourself

Delete template?

Save as template?