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HiSIM-SOI - TechConnect World

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Summary<br />

<strong>HiSIM</strong> is a compact surface-potential-based MOSFET with<br />

a minimum number of approximations, due to its iterative<br />

surface-potential determination.<br />

<strong>HiSIM</strong> allows to preserve a consistent potential-based<br />

modeling in its extension to other integrated-device<br />

structures containing a MOSFET core.<br />

A compact-model family covering all integrated devices<br />

containing a MOSFET core and sharing the same modeling<br />

concepts could be developed.<br />

<strong>HiSIM</strong> 38

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