HiSIM-SOI - TechConnect World
HiSIM-SOI - TechConnect World
HiSIM-SOI - TechConnect World
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carrier concentration<br />
T si =10nm<br />
gate<br />
gate<br />
<strong>HiSIM</strong>-DG<br />
V gs =1V<br />
V ds =0V<br />
T si<br />
T si =20nm<br />
gate<br />
gate<br />
T si =40nm<br />
gate<br />
gate<br />
T si<br />
Body potential is floating.<br />
The floating body potential makes modeling difficult.<br />
<strong>HiSIM</strong> 26
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