MITSUBISHI

MITSUBISHI LASER DIODESML4XX14 SERIESFOR OPTICAL INFORMATION SYSTEMSTYPENAMEML44114N, ML44114C, ML44114RML40114N, ML40114RDESCRIPTIONML4XX14 is an AIGaAs semiconductor laser whichprovides a stable, single transverse mode oscillationwith emission wavelength of 780nm and standardlight output of 3mW.ML4XX14 is produced by the MOCVD crystalgrowth method which is excellent in massproduction and characteristics uniformity. This is ahigh - performance, highly reliable, and long - lifesemiconductor laser.FEATURES• Single longitudinal mode oscillation• Short astigmatic distance• Low threshold current• Built- in monitor photodiode• High reliability, long operation life.Low droopAPPLICATIONLaser beam printer, digital copyABSOLUTE MAXIMUM RATINGSSymbol Parameter Conditions RatingsPo Light output powerCW 5Pulse (Note .1) 6VRL Reverse voltage (Laser diode) - 2VRD Reverse voltage ( Photodiode) - 15IFD Forward current (Photodiode) - 10Tc Case temperature - -40-+ 60Tstg Storage temperature - - 55-+ 100Note 1: Duty less than 50 %. pulse widty less than 1 fJ. s.UnitmWVVmA°c°CELECTRICAL/OPTICAL CHARACTERISTICS (Tc = 25°C)Symbol Parameter Test conditionsIth Threshold current CWlop Operating current CWo Po=3mWVop Operating voltage CWo Po=3mWT/ Slope efficiency CWA P Peak wavelength CWo Po-3mW8 II Beam divergence angle ( parallel) CW, Po = 3mW8J. Beam divergence angle (perpendicular) CW, Po=3mWMonitoring output current CWo Po = 3mW. VRD = 1 V.1m( Photodiode) RL= 10 Q (Note 2)ID Dark current ( Photodiode) VRD = 10VCt Total capacitance ( Photodiode) VRD = OV. f = 1 MHzNote 2: RL IS load resistance of the photodlode.LimitsMin. Typ.- 30- 50- 2.0- 0.25765 7809 1126 330.25 1.0- -- 7Max.50702.5-79515402.00.5-UnitmAmAVmW/mAnmdeg.deg.mAI1ApF. • MITSUBISHI.... ELECTRIC? - F\1