MITSUBISHI

MITSUBISHI LASER DIODESML4XX19 SERIESFOR OPTICAL COMMUNICATION SYSTEMSTYPENAMEML44119N, ML44119RDESCRIPTIONML4XX19 is an AlGa As semiconductor laser whichprovides a stable. single transverse mode oscillationwith emission wavelength of 780nm and standardlight output of 5mW.It is produced by the MOCVD crystal growth methodwhich is excellent in mass production and characteristicsuniformity. This is a high - performance.highly reliable. and long -life semiconductor laser.FEATURES• Low droop• Short astigmatic distance• Low threshold current• Single longitudinal, mode• Built- in photodiodeAPPLICATIONLaser beam printer and digital copyABSOLUTE MAXIMUM RATINGSSymbol Parameter Conditions RatingsPo Light output power CW 8VRL Reverse voltage (Laser diode) - 2VRD Reverse voltage ( Photodiode) - 15IFD Forward current ( Photodiode) - 10Tc Case temperature - - 40-+ 60Tstg Storage temperature - - 55-+ 100UnitmWVVmA'c'cELECTRICAL/OPTICAL CHARACTERISTICS (Tc = 25 'C)SymbolParameterIth Threshold currentlop Operating currentVop Operating voltage1/ Slope efficiencyA P Peak wavelength011 Beam divergence angle ( parallel)OJ. Beam divergence angle (perpendicular)Monitoring output current1m(Photodiode)ID Dark current ( Photodiode)Ct Total capacitance ( Photodiode)* RL = The load resistance of photodlode.Test conditionsCWCW.Po=5mWCW.Po=5mWCW.Po-5mWCW.Po-5mWCW.Po=5mWCW.Po=5mWCWo Po = 5mW. VRD = 1 V.RL *= 10QVRD = 10VVRD = OV. f = 1 MHzLimitsMin. Typ.- 30- 45- 2.0- 0.35765 7809 1126 330.3 0.7- -- 7Max.Unit50 mA70 mA2.5 V- mW/mA795 nm15 deg.40 deg,1.7 mA0.5 /1A- pF" ' 'MITSUBISHI..... a.ECTRIC2-71