MITSUBISHI

MITSUBISHI LASER DIODESML2XX1 SERIESFOR OPTICAL COMMUNICATIONTYPENAMEML2701DESCRIPTIONML2XXl is a high - Power AIGaAs semiconductorlaser which provides a stable. single transverse modeoscillation with emission wavelength of 830-870nmand standard light output of 8mW.ML2XXl uses a hermetically sealed package incorporatingthe photodiode for optical output monitoring.This high-performance. highly reliable. and long-lifesemiconductor laser is suitable for such applicationsas short- distance optical communications.FEATURES• Single longitudinal mode• Short astigmatic distance• Low threshold current. low operating current• Built- in monitor photodiode• High reliability. long operation fifeAPPLICATIONOptical communication systemsABSOLUTE MAXIMUM RATINGSSymbol Parameter Conditions RatingsPo Light output powerCW 10Pulse (Note 1) 15VRL Reverse voltage (Laser diode) - 3VRO Reverse voltage ( Photodiode) - 15IFo Forward curr~nt( Photodiode) - 10Tc Case temperature - - 40~+ 70T.,g Storage temperature - - 55~+ 100Note 1: Duty less than 50 %. pulse width less than 1 J1. s.UnitmWVVmA°C°cELECTRICAL/OPTICAL CHARACTERISTICS (Tc = 25°C)Symbol Parameter Test conditionsIth Threshold current CWlop Operating current CWo Po = 8mWVop Operating voltage CWo Po = 8mW11 Slope efficiency CW.Po=8mWA P Peak wavelength CW.Po=8mW8;; 8eam divergence angle ( parallel) CW.Po=8mW8l. Beam divergence angle (perpendicular) CW.Po=8mW1mMonitoring output current CWo Po = 8mW. VRO = 1 V.(Photodiode) RL = 10 Q (Note 2)10 Dark current (Photodiode) VRO = 10VC, Total capacitance (Photodiode) VRO = OV. f = 1 MHzNote 2: RL is load resistance of the photodiode.LimitsMin. Typ.- 30.- 55- 1.8- 0.32830 850- 12- 350.3 0.8- -- 7Max.Unit50 mA90 mA2.5 V- mW/mA870 nm- deg.- deg.2.0 mA0.5 J1.A- pF• MITSUBISHI.... FIF~~?-"l