large area and screen printed n-type silicon solar cells - ISC Konstanz

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Table I: Comparison of the best solar cell parametersmeasured under standard test conditions (AM1.5G, 100mW/cm 2 , 25 o C). The solar cells were fabricated on156.25 cm 2 multicrystalline Si substrates and 155.72 cm 2monocrystalline Cz Si. The average efficiency of the 10monocrystalline cells with random pyramids texture etchwas 17.9%. The base resistivity is 1.8 Ωcm for themulticrystalline cells and 1.5 Ωcm for the Cz cells.WaferSurfacetextureJ sc[mA/cm 2 ]V oc[mV]FF[%]η[%]mc-Si isotexture 35.2 607 76.7 16.4Cz isotexture 36.3 629 75.8 17.3Cz r.pyramids 37.3 630 77.8 18.3Figure 2: Carrier concentration profile for boron(emitter) diffusion measured by ECV method on apolished Cz Si wafer.antireflection coating layer deposited by PECVD [7]. Thecell process is completed with screen printing of the frontand back contacts followed by a co-firing step in order tobe able to make Ohmic contact between printed metalcontacts and Si. A schematic layout of the fabricatedsolar cells is shown in Figure 1.Figure 2 shows the resulting boron (emitter) dopingprofile measured on a polished Cz n-type test wafer,using the Electrochemical Capacitance-Voltage (ECV)method at ISC in Konstanz. The ECV measurementsreveal a doping profile of boron emitter up to 0.25 µmdepth with a visible surface depletion region. Thisdepletion is caused by the in-situ oxidation performed toremove the boron rich layer. Further optimization seemsto be needed in order to avoid this depletion region,which could enhance surface recombination of theminority charge carriers in the p + emitter because of anunfavorable electric field direction.3 RESULTS AND DISCUSSION3.1 Mono- and multi-crystalline cell resultsTable I shows the best solar cell parameters, obtainedusing the process described above, on multi- and monocrystallinesilicon wafers. These measurements werecarried out under the standard test conditions using aclass A solar simulator. As can be seen from the table, aconversion efficiency of 16.4% is achieved on multicrystallinen-type substrates and nearly 1% absolutehigher efficiency on monocrystalline Cz substrate. Withthe difference coming from short-circuit current (J SC ) andopen-circuit voltage (V OC ) it suggest that bulk lifetimemay still be an important limitation for multicrystalline n-type cells. A more quantitative analysis will follow laterin this paper.Nevertheless both, mono- and multicrystalline, cellefficiencies of table I represent the highest valuesreported for an n-type industrial process using screenprintedand fired-through metallization on large areasubstrates (exceptions are the high-efficiency cellconcepts of Sunpower and Sanyo [3,4]). This represents asignificant step forward for industrial production of solarcells based on n-type substrates. Moreover, furtherimprovements are expected (especially in the fill factor)for solar cells processed on isotexture etched surface. Wehave explored the benefits of this n-type process over themore developed and widely applied p-type process, andwork is underway to industrialize the n-type process.3.2 Effect of base resistivityIn the following we have investigated solar cellsfabricated on wafers belonging to different n-type multicrystallineSi ingots with difference in their baseresistivity, with the purpose to find out the optimumresistivity range for n-type multi-crystalline Si ingots andcells. Two multicrystalline n-type ingots grown in thesame furnace have been selected for this investigation: acompensated ingot (called ingot 5) which is partially p-type (boron) and partially n-type (antimony) doped.Such a compensated ingot is very well suited for this typeof investigation as it allows for a large variation in waferresistivity on a narrow part of the ingot size, whilevariation in concentration of metal impurities and crystaldefects is relatively small. The other n-type ingot (calledingot 6 /antimony doped) that we have investigated hasresistivity ranging from 2.2 to 0.3 Ωcm from bottom totop of the ingot. Solar cells have been fabricated (usingthe process described above) on 156.25 cm 2 wafersdistributed to cover a resistivity range of 0.8 to 7.7 Ωcmfrom ingot 5 and 0.3 to 2.2 Ωcm from ingot 6.Figure 3: Experimental power conversion efficiency ηand J SC ×V OC product versus base resistivity of bothmulticrystalline n-type Si ingots investigated.
Figure 4: Minority carrier lifetime in the bulk τ bdetermined from the PC1D fit of IQE data as a functionof wafer base resistivity.Figure 3 shows the experimental conversionefficiencies (η) and J SC ×V OC product as a function of baseresistivity for both ingots investigated. As seen from thefigure the best results are obtained for wafers belongingto ingot 6, with the highest performance obtained around25% from the bottom of the ingot. The parameters of thebest cell measured are shown in table I. Anotherinteresting result that can be observed in figure 3 is thatthe J SC ×V OC product continues to rise for cells made fromingot 6 as resistivity is increased while it stays ratherconstant for cells of ingot 5 for resistivities larger than1.3 Ωcm. Above 3.5 Ωcm a decrease in η of ingot 5 is,however, caused by a decrease in FF. This decrease in FFis a result of a higher series resistance. Nevertheless, weshow that the optimum base resistivity for n-typemulticrystalline Si feedstock lies between 1.5 to 4 Ωcm(these values can be lower if thinner wafers are produced)in order to maximize the efficiency output throughout theingot.Figure 4 shows the bulk lifetime (τ b ) resulting fromfitting the internal quantum efficiencies (IQE) data of thecells from both ingots investigated. From lifetime data itis observed that a resistivity higher than approximately1.3 Ωcm is required in order to ensure that bulk diffusionlength L d,bulk >W (W is the averaged wafer thickness of allinvestigated cells) for both ingots. For L d,bulk 85% towards the top of ingot 5. Notably, the lifetime asa function of resistivity shows for low resistivity a lineardependence, suggesting activity of some impurity whichis relatively harmful in n-type base (e. g. Au, Zn, perhapsCr) [1,8,9].3.3 Effect of impurities on emitter recombinationWhile the n-type base of the solar cells may beexpected to be less sensitive to many transition metalimpurities, the p + emitter could rather be more sensitive.It is commonly believed that recombination into thehighly doped emitter region is dominated by Auger andradiative recombination. Recent investigations, however,show that relatively large amounts of metal impurities(e.g., Fe, Cu, Cr) can be gettered in a n + (phosphorous)emitter duringFigure 5: Front (empty symbols) and rear side (semifilledsymbols) IQE of solar cells fabricated from amono-crystalline (Cz) ingot, a reference multi-crystalline,and a multi-crystalline ingot with 50 ppmw of Fe. Thesolid lines represent the PC1D calculation consideringthe emitter recombination parameters from table II.diffusion processes [10]. These gettered impurities haverelatively low impact on a n + emitters due to their highercapture cross-section of electrons as compared withholes.In order to verify that metal contamination of the p +emitters can indeed have a significant effect, n-type solarcells were fabricated (using the process described in thispaper) from clean monocrystalline (Cz) wafers,nominally clean multicrystalline Si wafers, and multicrystallineSi wafers from feedstock intentionallycontaminated with 50 ppmw of Fe [11]. The resultingIQE and I−V data were modeled using PC1D simulationprogram taking into account measured front and reardoping profiles, surface reflection, base resistivity, andwafer thickness. The relevant fit parameters left for themodeling are τ b , front and rear surface recombinationvelocities (SRV), and emitter recombination. The latterparameter has been introduced in our PC1D model as aseparate emitter region with an effective diffusion length(L d,emitter ) taken at an acceptor density of N A =10 20 cm −3 .By fitting both front and rear IQE data all fit parameterscan readily be determined. The results show that only τ b(or L d,bulk ) and L d,emitter needs to be varied betweenvarious cells with a constant front SRV of 1.0(±0.5)×10 4cm/s (on boron emitter) and rear SRV of 1.0(±1)×10 5cm/s (on phosphorous BSF). A constant SRV isexpected since all solar cells have been processed in thesame run.Figure 5 shows the experimental IQE curves(symbols) of selected cells from the three different ingotstogether with the PC1D fit using the model discussedabove. The front IQE clearly does not indicate a variationin front surface passivation. However, without includingrecombination active defects in the emitter(L d,emitter >>W emitter ), the PC1D calculated V OC and theexperimental V OC of the cells deviate significantly. Thedeviation varies from 6 mV for the Cz wafer, to 22 mVfor the Fe-contaminated wafer. This deviation can befitted well (without affecting the IQE curves) byincluding interstitial Fe defects into the p + emitter. Ofcourse, interstitial Fe is a likely contaminant that canaffect the diffusion length in the emitter, but also other
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large area and screen printed n-type silicon solar cells - ISC Konstanz

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