SU-8 Process Training

CNS STANDARD OPERATING PROCEDURE SOP084SU-8 Process Training10.0 POST EXPOSURE BAKE10.1 Please check table in section 7.2 above for the process condition.11.0 DEVELOPMENT11.1 Demonstrate development in SU-8 developer or PGMEA. Expecteddevelopment times vary between different types of resist.11.2 Demonstrate optical inspection of developed wafer/sample using Olympus opticalmicroscope. Point out indications of under or over-developed features.12.0 HARD BAKE (OPTIONAL)12.1 Hard bake temperature: 140°C – 150°C.12.2 Time: 30 minutes12.3 Explain how hard bake improves adhesion between SU-8 and substrate. Afterhard bake the resist will not be removed from the substrate during PDMS micromolding.12.4 The hard bake step is also useful for annealing any surface cracks that may beevident after development to produce a smoother surface/side edge.13.0 ADDITIONAL NOTES13.1 Cleaning13.1.1 Use PGMEA to clean SU-8 resist.13.1.2 Use IPA to clean PGMEA.13.2 Resist Removal13.2.1 Before exposure, PGMEA can be used to clean resist.13.2.2 O 2 plasma clean (Technics Plasma Stripper/Cleaner) can also be used atlow power (~60 Watts).13.2.3 Once exposure is done, SU-8 is almost impossible to remove.14.0 CLEAN-UP15.0 REVISION HISTORYRevision#Date Author (s) Changes/Additions0.0 3/26/10 HL Initial issue.0.1 5/14/10 EM Fixed title header, added captions, compressed.0.2 5/17/10 HL Clerical and notes regarding additional detail.0.3 5/18/10 EM Clerical.0.4 5/18/10 HL Clerical.------------ END OF DOCUMENT ------------SOP084_r0_4_SU-8 Training.doc 4/4 5/18/2010