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Heavy metal adsorption on iron oxide and iron oxide-coated silica ...

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27Overall, surface complexati<strong>on</strong> modeling is heavily dependent <strong>on</strong> the accuratechemical <strong>and</strong> physical representati<strong>on</strong> of surface complexes <strong>and</strong> the <strong>oxide</strong> surface (Hayes<strong>and</strong> Leckie, 1987; Cowan et al. 1991). Spectroscopic studies can provide qualitative <strong>and</strong>quantitative informati<strong>on</strong> <strong>on</strong> <str<strong>on</strong>g>adsorpti<strong>on</strong></str<strong>on</strong>g> modeling, c<strong>on</strong>necting molecular details tomacroscopic measurements <strong>and</strong> significantly improving the ability to model thesolid/liquid interface (e.g., Katz <strong>and</strong> Hayes, 1995 a, b; Hayes <strong>and</strong> Katz, 1996; Dyer et al.2003, 2004).2.4.2 Surface Complexati<strong>on</strong> Models <strong>and</strong> Their Applicati<strong>on</strong>sA variety of SCMs have been used for predicting sorpti<strong>on</strong> of <str<strong>on</strong>g>metal</str<strong>on</strong>g> i<strong>on</strong>s <strong>and</strong> other species<strong>on</strong> minerals (Westall <strong>and</strong> Hohl, 1980; Hayes <strong>and</strong> Katz, 1996; Lützenkirchen, 2002).Although these models may be expressed with similar mass law <strong>and</strong> material balanceequati<strong>on</strong>s, they involve different descripti<strong>on</strong>s of the electrical double layer (Westall <strong>and</strong>Hohl, 1980). The n<strong>on</strong>-electrostatic model (NEM) neglects the electrostatic effects; thediffuse layer model (DLM) uses the Gouy-Chapman equati<strong>on</strong> for the relati<strong>on</strong>shipbetween surface charge <strong>and</strong> potential in the interfacial regi<strong>on</strong>; the c<strong>on</strong>stant capacitancemodel (CCM) has <strong>on</strong>e sorpti<strong>on</strong> plane with an inner-layer capacitance, C 1 ; <strong>and</strong> the triplelayer model (TLM) incorporates the full Gouy-Chapman-Stern-Grahame equati<strong>on</strong> for theinterfacial regi<strong>on</strong> with two planes for surface complexati<strong>on</strong>, an inner- <strong>and</strong> outer-layercapacitance, C1 <strong>and</strong> C2 (Westall <strong>and</strong> Hohl, 1980; Hayes <strong>and</strong> Katz, 1996). The DLM <strong>and</strong>CCM are often limited to lower <strong>and</strong> higher (>0.01 M <strong>and</strong> c<strong>on</strong>stant) i<strong>on</strong>ic strengthc<strong>on</strong>diti<strong>on</strong>s, respectively. The TLM can be applied to a wide range of i<strong>on</strong>ic strengths withan upper limit of applicability being that for the Davies Equati<strong>on</strong> (Davies, 1962), which isemployed to account for activity correcti<strong>on</strong>s (Hayes et al. 1991).

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