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1 ECE 310L : L Read the lab assignment in its entirety. 1. For the ...

1 ECE 310L : L Read the lab assignment in its entirety. 1. For the ...

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<strong>ECE</strong> <strong>310L</strong> : LAB 10PRELAB ASSIGNMENT:<strong>Read</strong> <strong>the</strong> <strong>lab</strong> <strong>assignment</strong> <strong>in</strong> <strong>its</strong> <strong>entirety</strong>.<strong>1.</strong> <strong>For</strong> <strong>the</strong> circuit shown <strong>in</strong> Figure 3, compute a value for R1 that will result <strong>in</strong> a1N5230B zener diode current of approximately 5mA (you can ignore <strong>the</strong> effect ofbase current). Assume V<strong>in</strong> is 8V.OBJECTIVES:Construct and verify <strong>the</strong> operation of an NMOS unity ga<strong>in</strong> amplifier.Construct and verify <strong>the</strong> operation of a BJT unity ga<strong>in</strong> amplifier.Use an emitter follower/source follower to improve <strong>the</strong> load regulation of a zener diodevoltage regulator.MATERIALS:DC Power supplyOscilloscopeSignal GeneratorDMMSolderless breadboadHookup WireResistors: VariousCapacitors: 10uF, 100nFDiode: 1N5230BTransistors: ZVN3306A, 2N2222ABACKGROUND:Some amplifiers are design to act primarily as buffers, where <strong>the</strong>y isolate circu<strong>its</strong> byprovid<strong>in</strong>g high <strong>in</strong>put impedance while a voltage ga<strong>in</strong> of nearly one, or unity ga<strong>in</strong>. Thecommon-dra<strong>in</strong> NMOS amplifier shown <strong>in</strong> Figure 1 is one such amplifier, and iscommonly referred to as a source follower. The name source follower <strong>in</strong>dicates <strong>the</strong>output is taken from <strong>the</strong> source and is <strong>in</strong> phase with <strong>in</strong>put, i.e. V S “follows” V G . The termcommon dra<strong>in</strong> comes from <strong>the</strong> idea that <strong>the</strong> dra<strong>in</strong> is connected directly to V DD with noload resistance and <strong>in</strong> <strong>the</strong> AC analysis <strong>the</strong> supply rail, V DD , is a ground reference. Thevoltage ga<strong>in</strong> (A V ) of <strong>the</strong> source follower is <strong>in</strong>herently less than one and is generally <strong>in</strong><strong>the</strong> range 0.8 – 0.9. The current ga<strong>in</strong> can be much higher than one, though, allow<strong>in</strong>g <strong>the</strong>source follower to buffer between a high-impedance source and a low-impedance load.1


Figure 1A similar configuration that provides approximately unity ga<strong>in</strong> along with currentamplification is <strong>the</strong> BJT common-collector amplifier or <strong>the</strong> emitter follower. The emitterfollower is <strong>the</strong> BJT equivalent of <strong>the</strong> NMOS source follower. This <strong>lab</strong> will explore <strong>the</strong>operation of <strong>the</strong>se amplifiers and exam<strong>in</strong>e <strong>the</strong> ga<strong>in</strong> and phase response.Figure 22


The <strong>in</strong>put coupl<strong>in</strong>g capacitors are very large, so <strong>the</strong>ir poles will be near 0. The lowfrequency response of <strong>the</strong> system will thus be determ<strong>in</strong>ed by C 2 . The RC time constantwill set <strong>the</strong> cut-off frequency so <strong>in</strong> this design <strong>the</strong> significant time constant will be C 2 and<strong>the</strong> equivalent resistance seen by C 2 .In <strong>the</strong> NMOS amplifier <strong>the</strong> time constant will be determ<strong>in</strong>ed by <strong>the</strong> output capacitor, C 2 ,which is <strong>in</strong> series with <strong>the</strong> load resistor and <strong>the</strong> parallel comb<strong>in</strong>ation of <strong>the</strong> source1resistor and <strong>the</strong> impedance seen <strong>in</strong> <strong>the</strong> NMOS source, .gmVGS2IDVTN1 <strong>1.</strong>2k|| 100k100nFg m In <strong>the</strong> BJT amplifier, <strong>the</strong> time constant will be determ<strong>in</strong>ed by <strong>the</strong> output capacitor, C 2 ,which is <strong>in</strong> series with <strong>the</strong> load resistor and <strong>the</strong> parallel comb<strong>in</strong>ation of <strong>the</strong> emitterresistor and <strong>the</strong> impedance seen <strong>in</strong> <strong>the</strong> BJT emitter, r e .1 rTHre , wheregm1 4.7k|| 4.7kre 40I200 1 470 || 40IccgmVITCg m4.7k|| 4.7k 100k100nF200 Then, you will use <strong>the</strong> NMOS source follower and <strong>the</strong> BJT emitter followerconfigurations to help improve <strong>the</strong> l<strong>in</strong>e/load regulation of a zener diode voltage regulatorand allow for higher load current. The BJT version of this circuit is shown <strong>in</strong> Figure 3.Figure 3SETUP:Turn on power to <strong>the</strong> DMM, oscilloscope, power supply, and signal generator. Set <strong>the</strong>power supply +25V current limit to 100mA.3


Pay careful attention to <strong>the</strong> transistor p<strong>in</strong>-out as shown below to avoid damag<strong>in</strong>g <strong>the</strong>m.ZVN3306A p<strong>in</strong>-out2N2222A p<strong>in</strong>-outLAB ASSIGNMENT:<strong>1.</strong> Use <strong>the</strong> DMM to measure <strong>the</strong> values of <strong>the</strong> resistors. Use <strong>the</strong> measuredcomponent values <strong>in</strong> your calculations.2. Construct <strong>the</strong> circuit shown <strong>in</strong> Figure <strong>1.</strong> Connect <strong>the</strong> oscilloscope to measure <strong>the</strong><strong>in</strong>put and V OUT .3. Measure and record <strong>the</strong> operat<strong>in</strong>g po<strong>in</strong>t of <strong>the</strong> transistor (I D , V DS ). Note that<strong>the</strong>re is no dra<strong>in</strong> resistor to permit easy measurement of I D , but you canmeasure I S .4. Measure and plot <strong>the</strong> ga<strong>in</strong> and phase characteristics of <strong>the</strong> amplifier from 10Hzto 100kHz. Use a 1Vpp s<strong>in</strong>usoid as <strong>the</strong> <strong>in</strong>put.5. Increase <strong>the</strong> <strong>in</strong>put signal peak-to-peak voltage until <strong>the</strong> output signal becomesdistorted or clips. What are <strong>the</strong> <strong>in</strong>put and output voltage levels at this po<strong>in</strong>t? Howdo <strong>the</strong>se voltages relate to <strong>the</strong> bias po<strong>in</strong>t of <strong>the</strong> amplifier?6. Construct <strong>the</strong> circuit shown <strong>in</strong> Figure 2.7. Measure and record <strong>the</strong> operat<strong>in</strong>g po<strong>in</strong>t of <strong>the</strong> transistor (I C , V CE ). Note that<strong>the</strong>re is no collector resistor to permit easy measurement of I C , but you canmeasure I E .8. Measure and plot <strong>the</strong> ga<strong>in</strong> and phase characteristics of <strong>the</strong> amplifier from 10Hzto 100kHz. Use a 1Vpp s<strong>in</strong>usoid as <strong>the</strong> <strong>in</strong>put.9. Increase <strong>the</strong> <strong>in</strong>put signal peak-to-peak voltage until <strong>the</strong> output signal becomesdistorted or clips. What are <strong>the</strong> <strong>in</strong>put and output voltage levels at this po<strong>in</strong>t? Howdo <strong>the</strong>se voltages relate to <strong>the</strong> bias po<strong>in</strong>t of <strong>the</strong> amplifier?10. Construct <strong>the</strong> circuit shown <strong>in</strong> Figure 3. Set V<strong>in</strong> to 8V. Use a value for R1 that willresult <strong>in</strong> a 1N5230B zener diode current of approximately 5mA (you can ignore<strong>the</strong> effect of base current). Use 10kΩ for <strong>the</strong> <strong>in</strong>itial load resistor (this will beconsidered <strong>the</strong> no-load condition).4


1<strong>1.</strong> Measure <strong>the</strong> output voltage V REG .12. Add a parallel load resistor that will <strong>in</strong>crease <strong>the</strong> output current to approximately25 mA. Measure <strong>the</strong> output voltage V REG .13. Add a parallel load resistor that will <strong>in</strong>crease <strong>the</strong> output current to approximately50 mA. Measure <strong>the</strong> output voltage V REG .14. Leave <strong>the</strong> load set to approximately 50mA, and reduce V<strong>in</strong> to 7.2V. Measure <strong>the</strong>output voltage V REG .15. Increase V<strong>in</strong> to 8.8V. Measure <strong>the</strong> output voltage V REG .16. Replace <strong>the</strong> BJT with <strong>the</strong> NMOS FET, and repeat steps 10-15.REPORT:Write your report per <strong>the</strong> criteria <strong>in</strong> <strong>the</strong> syl<strong>lab</strong>us and <strong>the</strong> sample <strong>lab</strong> report posted on<strong>the</strong> course web page.In your report, also answer <strong>the</strong> questions below;<strong>1.</strong> Plot your ga<strong>in</strong> (dB) and phase measurements versus <strong>the</strong> <strong>in</strong>put frequency. Use alogarithmic scale for frequency.2. How does <strong>the</strong> measured low-frequency response of <strong>the</strong> amplifiers compared to<strong>the</strong> expected values?3. Compare <strong>the</strong> performance of <strong>the</strong> voltage regulators to each o<strong>the</strong>r. Calculate l<strong>in</strong>eand load regulation for both regulator configurations.5

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