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Prototyping of microfluidic systems with integrated ... - DTU Nanotech

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3.5 Resistance <strong>of</strong> COC to Reactive Ion Etching 33<br />

Figure 3.5: Comparison <strong>of</strong> the resistance to reactive ion etching <strong>of</strong> COC/Topas<br />

to three other commonly used polymer types, namely PMMA, SU-8, and AZ5214E<br />

photoresist. Top: Etch rates using an oxygen plasma. It is seen that the etch rate <strong>of</strong><br />

Topas is comparable to that <strong>of</strong> photoresist, much better than PMMA and lower than<br />

that <strong>of</strong> crosslinked SU-8. Bottom: Using a SF6/O2 plasma, Topas is more resistant<br />

than the other polymers. The etch rates are listed in Table 3.3.<br />

14

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