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Annual report 2009 - Imec

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hIGhLIGhTs<br />

IMEC ENERGY<br />

HIgHLIgHTS - <strong>Imec</strong>’s photovoltaic research focuses on improving the conversion<br />

efficiency and lowering the price of silicon solar cells. <strong>Imec</strong> also works on organic<br />

solar cells and on high-efficiency cells based on III-V materials. Another focus of<br />

the energy research is gaN for power electronics and LED lighting.<br />

01<br />

<strong>Imec</strong> signs<br />

collaboration agreements<br />

<strong>2009</strong>, imec signed a collaboration agreement with<br />

Total and GDF-Suez (two major energy companies),<br />

Photovoltech (solar cell producer), and Schott Solar<br />

(solar cell producer). The goal of the agreement is<br />

to reduce the cost of solar energy with crystalline<br />

silicon cells by reducing the use of silicon as base<br />

material and by increasing the efficiency of the cells.<br />

This research is done in the frame of imec’s IIAP on<br />

crystalline silicon solar technology. Other partners in<br />

this program are material and tool suppliers MEMC<br />

Electronic Materials Inc., Leybold Optics Dresden<br />

GmbH, Roth & Rau AG, and Mallinckrodt Baker B.V.<br />

Next to the IIAP, imec has bilateral collaboration<br />

agreements in solar technology with important<br />

players such as BP Solar and Kaneka.<br />

48<br />

02<br />

GaN IIAP<br />

launched<br />

In <strong>2009</strong>, imec has launched a new industrial affiliation<br />

program (IIAP) on GaN. In this program, imec and its<br />

partners work on GaN technology for both power<br />

conversion and solid-state lighting.<br />

For power electronics, the IIAP aims at developing<br />

high-voltage, low-loss, high-power switching devices.<br />

Potential applications include high-power switching<br />

in solar converters, motor drives, hybrid electrical<br />

vehicles or switch mode power supplies. An important<br />

goal of the program is to lower the cost of GaN<br />

processing by using large-diameter GaN-on-Si.<br />

The program also exploits GaN-on-Si for high-efficiency<br />

high-power LEDs. A key issue that is addressed is<br />

the enhancement of external and internal quantum<br />

efficiencies for enabling high-power LEDs.<br />

SiN/AlgaN/gaN field effect transistor

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