Annual report 2009 - Imec
Annual report 2009 - Imec
Annual report 2009 - Imec
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hIGhLIGhTs<br />
IMEC ENERGY<br />
HIgHLIgHTS - <strong>Imec</strong>’s photovoltaic research focuses on improving the conversion<br />
efficiency and lowering the price of silicon solar cells. <strong>Imec</strong> also works on organic<br />
solar cells and on high-efficiency cells based on III-V materials. Another focus of<br />
the energy research is gaN for power electronics and LED lighting.<br />
01<br />
<strong>Imec</strong> signs<br />
collaboration agreements<br />
<strong>2009</strong>, imec signed a collaboration agreement with<br />
Total and GDF-Suez (two major energy companies),<br />
Photovoltech (solar cell producer), and Schott Solar<br />
(solar cell producer). The goal of the agreement is<br />
to reduce the cost of solar energy with crystalline<br />
silicon cells by reducing the use of silicon as base<br />
material and by increasing the efficiency of the cells.<br />
This research is done in the frame of imec’s IIAP on<br />
crystalline silicon solar technology. Other partners in<br />
this program are material and tool suppliers MEMC<br />
Electronic Materials Inc., Leybold Optics Dresden<br />
GmbH, Roth & Rau AG, and Mallinckrodt Baker B.V.<br />
Next to the IIAP, imec has bilateral collaboration<br />
agreements in solar technology with important<br />
players such as BP Solar and Kaneka.<br />
48<br />
02<br />
GaN IIAP<br />
launched<br />
In <strong>2009</strong>, imec has launched a new industrial affiliation<br />
program (IIAP) on GaN. In this program, imec and its<br />
partners work on GaN technology for both power<br />
conversion and solid-state lighting.<br />
For power electronics, the IIAP aims at developing<br />
high-voltage, low-loss, high-power switching devices.<br />
Potential applications include high-power switching<br />
in solar converters, motor drives, hybrid electrical<br />
vehicles or switch mode power supplies. An important<br />
goal of the program is to lower the cost of GaN<br />
processing by using large-diameter GaN-on-Si.<br />
The program also exploits GaN-on-Si for high-efficiency<br />
high-power LEDs. A key issue that is addressed is<br />
the enhancement of external and internal quantum<br />
efficiencies for enabling high-power LEDs.<br />
SiN/AlgaN/gaN field effect transistor