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Stresses in Cu Thin Films and Ag/Ni Multilayers - Harvard School of ...

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Chapter 1: Background 13<br />

Figure 1.4: A schematic <strong>of</strong> the curvature measurement apparatus at <strong>Harvard</strong> University.<br />

Adapted from Mull<strong>in</strong> [158].<br />

where Ys is the biaxial modulus <strong>of</strong> the substrate, ts is the substrate thickness, <strong>and</strong> tf is the<br />

film thickness. This equation assumes tf ≪ ts; <strong>in</strong> this limit, determ<strong>in</strong>ation <strong>of</strong> the film stress<br />

does not rely on knowledge <strong>of</strong> the biaxial modulus <strong>of</strong> the film. Appendix E provides a<br />

derivation <strong>of</strong> Stoney’s equation.<br />

The wafer curvature measurement / anneal<strong>in</strong>g apparatus at <strong>Harvard</strong> University is called<br />

ROC <strong>and</strong> is shown <strong>in</strong> Figure 1.4. The technical details <strong>of</strong> how it measures the curvature can<br />

be found <strong>in</strong> Witvrouw’s or Mull<strong>in</strong>’s thesis [256, 158], but the pr<strong>in</strong>ciple is well known [62].<br />

The 1 <strong>in</strong>ch by 1/4 <strong>in</strong>ch sample rests <strong>in</strong> a furnace on two sapphire prisms <strong>and</strong> is abutted on<br />

two adjacent sides by steel p<strong>in</strong>s to allow repeatable sample placement. A HeNe laser scans<br />

across the long axis <strong>of</strong> the sample <strong>in</strong> 1 mm steps, <strong>and</strong> the reflected beam is collected <strong>in</strong> a<br />

null detector. The position <strong>of</strong> the reflected spot is recorded as a function <strong>of</strong> position along<br />

the sample, thereby giv<strong>in</strong>g the sample curvature.

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