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<strong>The</strong> speed <strong>of</strong> a microprocessor is to a large extent a function <strong>of</strong> the number<br />

<strong>of</strong> transistors on the chip, and reducing the size <strong>of</strong> the transistor allows this increase<br />

in chip density. A benchmark for the ability to increase chip density has been the<br />

minimum <strong>line</strong> width, or critical dimension (CD), <strong>of</strong> the g<strong>at</strong>e in a MOSFET. <strong>The</strong><br />

current technology used to p<strong>at</strong>tern these small fe<strong>at</strong>ures is known as<br />

photolithography. If this trend in increasing microprocessor density is to continue,<br />

photolithography must continue to be a cost-effective solution.<br />

1.3 PHOTOLITHOGRAPHY<br />

A typical photolithography process is shown in Figure 1.3. A Si wafer is<br />

co<strong>at</strong>ed with a photosensitive compound known as “photoresist”, or “resist” for<br />

short, which changes in chemical n<strong>at</strong>ure upon irradi<strong>at</strong>ion to become more or less<br />

soluble in a given solvent. Neg<strong>at</strong>ive tone resists undergo changes upon exposure<br />

th<strong>at</strong> reduce the solubility in the exposed regions. Positive tone resists change in<br />

chemical n<strong>at</strong>ure making them more soluble in developer. <strong>The</strong> polymer image<br />

remaining after removing the more soluble m<strong>at</strong>erial is then used as an etch mask in<br />

a reactive ion etch (RIE) process, which transfers the physical image into the<br />

underlying m<strong>at</strong>erial.<br />

5

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