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sputtering from a metallic In/Sn target using an oxygen-rich sputtering gas feed, 53 spin- or dip-coating a solution of indium and tin compounds followed by thermal activation, 54,55 or by UV-photolysis of an ITO polymeric film. 56 The first method is most common. Studies of deposited films reveal a strong dependence of optical and electrical properties on preparation conditions, particularly related to oxidation and Sn incorporation. 57-60 2.2.3 Experimental Method 61 Early in process development round quartz wafers were used in place of the square photomask substrates because the chucks designed to hold photomask substrates had not yet been delivered. For the Cr process flow experiments, quartz wafers were coated with 100 Å Cr using a MRC 603 DC magnetron load-locked sputtering system at 1200 W and 35 mTorr process run in a single pass mode. The samples were coated with 180 nm NEB-22 resist, and were exposed on a Leica VB6 system operating at 100 kV with an e-beam dose ranging from 25 to 65 µC/cm 2 . Early in the SFIL ITO-template development process ITO films were obtained from Silicon Quest (SQ), and were DC sputtered at 1 kW in 100% Ar at a pressure of 8 mTorr. Subsequent development was done internally in a customized RF sputter system operating at a power of 100 W and an Ar/O2 pressure of 6 mTorr using an In2O3/SnO2 (90:10) target. Some films were annealed at various temperatures in an oven containing ambient atmosphere. Resistivity measurements were made using a Magnetron 4-point probe instrument. Ultraviolet/visible (UV/Vis) transmission spectra were obtained using a Perkin Elmer Lambda 18 UV/Vis spectrometer. For this analysis, ITO samples were prepared on smooth 29
quartz substrates. Percent transmission curves were calculated by referencing the ITO samples to a clean quartz substrate. Plasma-enhanced chemical vapor-deposited (PECVD) oxide was deposited in a Novellus Concept 1 system at a temperature of 250 ºC. All pattern transfer experiments were performed in a Unaxis VLR system. A chlorine and oxygen mixture was used to etch the Cr films. 39 A CHF3 based etch was used to pattern transfer either the PECVD oxide or the quartz substrates. Critical dimension (CD) measurements and top down micrographs were taken with a Hitachi S7800 CD-SEM equipped with a cold cathode source and an automated pattern recognition system. The repeatability of the CD-SEM is 3.5 nm (3σ) for line measurements and 1.4 nm (3σ) for pitch. Cross-sectioned images were obtained with a Hitachi S4500 SEM operating at 5 kV. 2.2.4 Imprint Templates using Thinned Chromium Process Flow 62 Linewidths (CDs for short) were measured for 100 nm/100 nm line/space arrays after e-beam patterning, and again after Cr and quartz etch processes, after which the remaining resist and Cr were removed. In its final state the solid quartz wafer possessed no charge dissipation capabilities, which made CD measurement in the SEM very difficult; therefore the sample was coated with a 5 nm blanket Cr film to allow CD-SEM inspection, and the CDs were again measured. The resulting CD- vs.-dose curve shows an increase in CD with increasing dose. There was no observed CD bias between the resist features and the etched features. The ~10 nm increase in final CD is most likely due to the existence of the 5 nm blanket Cr film deposited following patterned Cr removal. NEB-22 is very sensitive to temperature 30
Page 1 and 2: Copyright by Todd Christopher Baile
Page 3 and 4: Imprint Template Advances and Surfa
Page 5 and 6: Dedication This is dedicated to my
Page 7 and 8: I want to thank those who aided in
Page 9 and 10: mitigation of the shift in feature
Page 11 and 12: Chapter 4: Review of the Reaction o
Page 13 and 14: Appendix D: Conversion of KLA Data
Page 15 and 16: List of Figures Figure 1.1. Schemat
Page 17 and 18: Figure 5.3: Water contact angle and
Page 19 and 20: Figure 7.25: Images captured during
Page 21 and 22: Figure B.8: Program diagram for Swi
Page 23 and 24: “source” and “drain” region
Page 25 and 26: computing power is required. Microp
Page 27 and 28: Photoresist Substrate Mask hυ hυ
Page 29 and 30: Tool Price ($) $100,000,000 $10,000
Page 31 and 32: material. This material takes the s
Page 33 and 34: planarizing/transfer layer was coat
Page 35 and 36: patterned relief structures is alig
Page 37 and 38: Contact lithography predates the pr
Page 39 and 40: 8. Chou, S.Y., P.R. Krauss, and P.J
Page 41 and 42: SFIL IMPRINT PROCESS DEVELOPMENT Ch
Page 43 and 44: substrate that changes in chemical
Page 45 and 46: In modern photomask production, imp
Page 47 and 48: and CD-SEM inspection, and also all
Page 49: Requirements for Transparent Conduc
Page 53 and 54: a) b) Figure 2.5: (a) 30 nm trenche
Page 55 and 56: nm, so the normalization to film th
Page 57 and 58: with increasing anneal time, up to
Page 59 and 60: 2.12 shows line/space features poss
Page 61 and 62: a) b) Figure 2.14: SEM micrographs
Page 63 and 64: a) c) e) Index Index Index 2.7 2.5
Page 65 and 66: function of ITO thickness is much g
Page 67 and 68: esidual layer only. The right plot
Page 69 and 70: it is mentioned here for context. T
Page 71 and 72: Some results are shown in Figure 2.
Page 73 and 74: 5. Widden, T.K., et al., Nanotechno
Page 75 and 76: 45. Lewis, B.G. and D.C. Paine, MRS
Page 77 and 78: 3.1 BACKGROUND Chapter 3: SFIL Etch
Page 79 and 80: 3.2 EXPERIMENTAL For the imprinting
Page 81 and 82: The fluorinated additive experiment
Page 83 and 84: Formulation M2 did not polymerize.
Page 85 and 86: adhesive forces at the two interfac
Page 87 and 88: Chapter 4: Review of the Reaction o
Page 89 and 90: such as annealing. Each of these ex
Page 91 and 92: on colloidal silica particles. 9 He
Page 93 and 94: Figure 4.2: From Chuang, et al. 16
Page 95 and 96: was achieved by exposing the surfac
Page 97 and 98: Cras, et al. 37 compared various we
Page 99 and 100: where X is either an alkoxy group o
Page 101 and 102:
with increasing temperature. They a
Page 103 and 104:
from liquid and supercritical CO2.
Page 105 and 106:
hydrolyzed intermediates. These res
Page 107 and 108:
limiting film thickness. This is in
Page 109 and 110:
authors observed a decrease in the
Page 111 and 112:
to form SAM films of at least moder
Page 113 and 114:
was able to predict the networking
Page 115 and 116:
39. Ruzyllo, J., et al., Proc. Elec
Page 117 and 118:
77. Allara, D., A.N. Parikh, and F.
Page 119 and 120:
Chapter 5: SFIL Imprint Template Re
Page 121 and 122:
5.1.3 Self-Assembled Monolayer Rele
Page 123 and 124:
ITO, followed by plasma-enhanced ch
Page 125 and 126:
5.3 RESULTS AND DISCUSSION 5.3.1 Fu
Page 127 and 128:
a) b) Water Contact Angle F:Si Area
Page 129 and 130:
Imprinting Durability of FOTS on Fu
Page 131 and 132:
At the time of this writing, no oth
Page 133 and 134:
Methanol adsorption below 130 K fol
Page 135 and 136:
of the SiO2 layer to define the tem
Page 137 and 138:
treatment films of at least modest
Page 139 and 140:
imprinting durability. Due to the r
Page 141 and 142:
Chapter 6: Effect of Substrate Hydr
Page 143 and 144:
The Ag 3d5/2 XPS peak at 368.3 eV f
Page 145 and 146:
dθ Equation 6.8 ( ) 2 OH , 3 3 −
Page 147 and 148:
Concentration (nm -2 ) 5 4.5 4 3.5
Page 149 and 150:
Mass (mg) 14 13.9 13.8 13.7 13.6 13
Page 151 and 152:
silanol coverage for temperatures b
Page 153 and 154:
increasing film density with increa
Page 155 and 156:
7.1 INTRODUCTION DEFECT ANALYSIS FO
Page 157 and 158:
The fundamental question to be answ
Page 159 and 160:
placement in the die array must be
Page 161 and 162:
an exposure source that is used to
Page 163 and 164:
the transfer layer. The BARC was sp
Page 165 and 166:
Figure 7.5: UT MER South cleanroom
Page 167 and 168:
English rating denotes the number o
Page 169 and 170:
wall of the cleanroom was a large c
Page 171 and 172:
The results of the particles genera
Page 173 and 174:
the wafer chuck, and we have attemp
Page 175 and 176:
7.4 RESULTS & DISCUSSION 7.4.1 Temp
Page 177 and 178:
a) that protects the master from co
Page 179 and 180:
determines the absolute value of co
Page 181 and 182:
a) b) c) Figure 7.16: Resist images
Page 183 and 184:
Figure 7.18: Evolution of slope (so
Page 185 and 186:
Figure 7.19: SSE for the data in Fi
Page 187 and 188:
and 92 in the denominator is 3.95;
Page 189 and 190:
a) b) Figure 7.22: (a) Obvious patt
Page 191 and 192:
Table 7.1: Percent standard error i
Page 193 and 194:
a) c) e) Defect Density (cm -2 ) De
Page 195 and 196:
defect bins reveal an increase in d
Page 197 and 198:
detected defects in one particular
Page 199 and 200:
imprints show little or no increase
Page 201 and 202:
a) b) Defect Density (cm -2 ) Defec
Page 203 and 204:
Figure 7.35 shows a defect composed
Page 205 and 206:
a) b) c) d) e) f) g) h) i) j) k) Fi
Page 207 and 208:
a) b) c) Figure 7.34: Example defec
Page 209 and 210:
a) b) c) Figure 7.36: Example defec
Page 211 and 212:
Figure 7.37: Stress-strain comparis
Page 213 and 214:
7.6 CONCLUSIONS The SFIL cleanroom
Page 215 and 216:
Chapter 8: Effect of Film thickness
Page 217 and 218:
8.2 EXPERIMENTAL A Woollam M-2000 s
Page 219 and 220:
a) b) Figure 8.4. (a) Irradiance sp
Page 221 and 222:
intensity of the Xe lamp, and RspCC
Page 223 and 224:
a) b) Contrast Contrast 10 9 8 7 6
Page 225 and 226:
a) b) Figure 8.7. Contrast response
Page 227 and 228:
a) b) c) Transfer Layer Thickness (
Page 229 and 230:
contrast prior to subsequent etchin
Page 231 and 232:
The etch barrier imprinting fidelit
Page 233 and 234:
evaluation needs to be undertaken t
Page 235 and 236:
where η0 and ηm are the optical a
Page 237 and 238:
N_SiO2 = SiO2(2,2:3); t_SiO2 = 100;
Page 239 and 240:
SFILCalc.m function data = SFILcalc
Page 241 and 242:
function [a] = phase(lambda,N,H,thi
Page 243 and 244:
Figure B.1: Picture of the surface
Page 245 and 246:
An Omega type K thermocouple is con
Page 247 and 248:
Figure B.2: Diagram of surface trea
Page 249 and 250:
Figure B.3: User interface for the
Page 251 and 252:
option when the program is started
Page 253 and 254:
Figure B.7: Various subVIs called b
Page 255 and 256:
Figure B.10: Program diagram for Ch
Page 257 and 258:
The Auto program uses these same su
Page 259 and 260:
Figure C.1: Force balance diagram f
Page 261 and 262:
Figure C.2: Plot of cos θ vs. γlv
Page 263 and 264:
Figure C.4: Plot of cos θ vs. γlv
Page 265 and 266:
Equation C.8 which upon rearrangeme
Page 267 and 268:
and electron-donor (γ - ) paramete
Page 269 and 270:
where θ0 is the contact angle in v
Page 271 and 272:
Kwok, et al reinforce the relation
Page 273 and 274:
Figure C.7: Correlation between mea
Page 275 and 276:
If one requires only an estimation
Page 277 and 278:
32. Kwok, D.Y., et al., Langmuir, 1
Page 279 and 280:
a separate delimited text file for
Page 281 and 282:
2 -2 M -1 1; AreaPerTest 1.20197e+0
Page 283 and 284:
ins1 = strcat('< ',num2str(edges(2)
Page 285 and 286:
n(2) = n(2) + 1; case 3 n(3) = n(3)
Page 287 and 288:
Appendix E: Estimation of Downstrea
Page 289 and 290:
Figure E.1: Experimental FTIR appar
Page 291 and 292:
Figure E.2: Vapor pressure apparatu
Page 293 and 294:
Absorbance 0.16 0.14 0.12 0.1 0.08
Page 295 and 296:
Absorbance 0.3 0.25 0.2 0.15 0.1 0.
Page 297 and 298:
Absorbance 2.45 1.95 1.45 0.95 0.45
Page 299 and 300:
Figure E.9: Comparison of experimen
Page 301 and 302:
ln(Psat (Torr)) 1.5 1 0.5 0 -0.5 -1
Page 303 and 304:
FOTS Concentration (mol/liter) 2.0E
Page 305 and 306:
Bouwhuis, G., et al., Principles of
Page 307 and 308:
Constantine, C., R. Westerman, and
Page 309 and 310:
Gun'ko, V.M., et al., Inter. J. Mas
Page 311 and 312:
Lee, L.-H., J. Coll. Int. Sci., 199
Page 313 and 314:
Pellerite, M.J., E.J. Wood, and V.W
Page 315 and 316:
The Aldrich Library of FT-IR Spectr
Page 317:
VITA Todd Christopher Bailey was bo
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