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a)<br />

b)<br />

Figure 2.2: Modific<strong>at</strong>ion <strong>of</strong> the photomask process yields SFIL imprint templ<strong>at</strong>es.<br />

(a) <strong>The</strong> p<strong>at</strong>terned Cr layer is used as an etch mask to transfer the p<strong>at</strong>tern into the<br />

quartz substr<strong>at</strong>e, and then removed, yielding (b) all-quartz imprint templ<strong>at</strong>es bearing<br />

topography.<br />

Most templ<strong>at</strong>es manufactured to d<strong>at</strong>e have been produced this way. This<br />

process yields templ<strong>at</strong>es th<strong>at</strong> are comprised entirely <strong>of</strong> fused silica, and the final<br />

templ<strong>at</strong>es do not the possess charge dissip<strong>at</strong>ion capabilities required for post-<br />

processing SEM inspection. Considering th<strong>at</strong> imprint lithography challenges mask-<br />

making technology by requiring 1X fe<strong>at</strong>ures, the ability to inspect and repair imprint<br />

templ<strong>at</strong>es is <strong>of</strong> extreme importance. <strong>The</strong> process shown in Figure 2.2 and described<br />

in detail in Section 2.2.3 results in high resolution imprint templ<strong>at</strong>es consisting<br />

entirely <strong>of</strong> bulk SiO2, and therefore is not comp<strong>at</strong>ible with the standard, high<br />

resolution inspection and repair technology.<br />

2.2.2 Introduction to Templ<strong>at</strong>es Fabric<strong>at</strong>ed using the Transparent<br />

Conducting Oxide Process Flow<br />

In order to circumvent the charge dissip<strong>at</strong>ion problem associ<strong>at</strong>ed with all-<br />

quartz templ<strong>at</strong>es, a layer <strong>of</strong> transparent, conducting m<strong>at</strong>erial can be embedded into<br />

the final templ<strong>at</strong>e, thereby allowing charge dissip<strong>at</strong>ion during both e-beam writing<br />

25

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