- Page 1 and 2: Copyright by Todd Christopher Baile
- Page 3 and 4: Imprint Template Advances and Surfa
- Page 5 and 6: Dedication This is dedicated to my
- Page 7 and 8: I want to thank those who aided in
- Page 9 and 10: mitigation of the shift in feature
- Page 11 and 12: Chapter 4: Review of the Reaction o
- Page 13 and 14: Appendix D: Conversion of KLA Data
- Page 15 and 16: List of Figures Figure 1.1. Schemat
- Page 17 and 18: Figure 5.3: Water contact angle and
- Page 19 and 20: Figure 7.25: Images captured during
- Page 21 and 22: Figure B.8: Program diagram for Swi
- Page 23 and 24: “source” and “drain” region
- Page 25 and 26: computing power is required. Microp
- Page 27 and 28: Photoresist Substrate Mask hυ hυ
- Page 29 and 30: Tool Price ($) $100,000,000 $10,000
- Page 31 and 32: material. This material takes the s
- Page 33 and 34: planarizing/transfer layer was coat
- Page 35 and 36: patterned relief structures is alig
- Page 37 and 38: Contact lithography predates the pr
- Page 39: 8. Chou, S.Y., P.R. Krauss, and P.J
- Page 43 and 44: substrate that changes in chemical
- Page 45 and 46: In modern photomask production, imp
- Page 47 and 48: and CD-SEM inspection, and also all
- Page 49 and 50: Requirements for Transparent Conduc
- Page 51 and 52: quartz substrates. Percent transmis
- Page 53 and 54: a) b) Figure 2.5: (a) 30 nm trenche
- Page 55 and 56: nm, so the normalization to film th
- Page 57 and 58: with increasing anneal time, up to
- Page 59 and 60: 2.12 shows line/space features poss
- Page 61 and 62: a) b) Figure 2.14: SEM micrographs
- Page 63 and 64: a) c) e) Index Index Index 2.7 2.5
- Page 65 and 66: function of ITO thickness is much g
- Page 67 and 68: esidual layer only. The right plot
- Page 69 and 70: it is mentioned here for context. T
- Page 71 and 72: Some results are shown in Figure 2.
- Page 73 and 74: 5. Widden, T.K., et al., Nanotechno
- Page 75 and 76: 45. Lewis, B.G. and D.C. Paine, MRS
- Page 77 and 78: 3.1 BACKGROUND Chapter 3: SFIL Etch
- Page 79 and 80: 3.2 EXPERIMENTAL For the imprinting
- Page 81 and 82: The fluorinated additive experiment
- Page 83 and 84: Formulation M2 did not polymerize.
- Page 85 and 86: adhesive forces at the two interfac
- Page 87 and 88: Chapter 4: Review of the Reaction o
- Page 89 and 90: such as annealing. Each of these ex
- Page 91 and 92:
on colloidal silica particles. 9 He
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Figure 4.2: From Chuang, et al. 16
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was achieved by exposing the surfac
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Cras, et al. 37 compared various we
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where X is either an alkoxy group o
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with increasing temperature. They a
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from liquid and supercritical CO2.
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hydrolyzed intermediates. These res
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limiting film thickness. This is in
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authors observed a decrease in the
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to form SAM films of at least moder
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was able to predict the networking
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39. Ruzyllo, J., et al., Proc. Elec
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77. Allara, D., A.N. Parikh, and F.
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Chapter 5: SFIL Imprint Template Re
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5.1.3 Self-Assembled Monolayer Rele
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ITO, followed by plasma-enhanced ch
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5.3 RESULTS AND DISCUSSION 5.3.1 Fu
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a) b) Water Contact Angle F:Si Area
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Imprinting Durability of FOTS on Fu
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At the time of this writing, no oth
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Methanol adsorption below 130 K fol
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of the SiO2 layer to define the tem
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treatment films of at least modest
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imprinting durability. Due to the r
- Page 141 and 142:
Chapter 6: Effect of Substrate Hydr
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The Ag 3d5/2 XPS peak at 368.3 eV f
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dθ Equation 6.8 ( ) 2 OH , 3 3 −
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Concentration (nm -2 ) 5 4.5 4 3.5
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Mass (mg) 14 13.9 13.8 13.7 13.6 13
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silanol coverage for temperatures b
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increasing film density with increa
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7.1 INTRODUCTION DEFECT ANALYSIS FO
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The fundamental question to be answ
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placement in the die array must be
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an exposure source that is used to
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the transfer layer. The BARC was sp
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Figure 7.5: UT MER South cleanroom
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English rating denotes the number o
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wall of the cleanroom was a large c
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The results of the particles genera
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the wafer chuck, and we have attemp
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7.4 RESULTS & DISCUSSION 7.4.1 Temp
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a) that protects the master from co
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determines the absolute value of co
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a) b) c) Figure 7.16: Resist images
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Figure 7.18: Evolution of slope (so
- Page 185 and 186:
Figure 7.19: SSE for the data in Fi
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and 92 in the denominator is 3.95;
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a) b) Figure 7.22: (a) Obvious patt
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Table 7.1: Percent standard error i
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a) c) e) Defect Density (cm -2 ) De
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defect bins reveal an increase in d
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detected defects in one particular
- Page 199 and 200:
imprints show little or no increase
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a) b) Defect Density (cm -2 ) Defec
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Figure 7.35 shows a defect composed
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a) b) c) d) e) f) g) h) i) j) k) Fi
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a) b) c) Figure 7.34: Example defec
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a) b) c) Figure 7.36: Example defec
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Figure 7.37: Stress-strain comparis
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7.6 CONCLUSIONS The SFIL cleanroom
- Page 215 and 216:
Chapter 8: Effect of Film thickness
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8.2 EXPERIMENTAL A Woollam M-2000 s
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a) b) Figure 8.4. (a) Irradiance sp
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intensity of the Xe lamp, and RspCC
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a) b) Contrast Contrast 10 9 8 7 6
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a) b) Figure 8.7. Contrast response
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a) b) c) Transfer Layer Thickness (
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contrast prior to subsequent etchin
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The etch barrier imprinting fidelit
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evaluation needs to be undertaken t
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where η0 and ηm are the optical a
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N_SiO2 = SiO2(2,2:3); t_SiO2 = 100;
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SFILCalc.m function data = SFILcalc
- Page 241 and 242:
function [a] = phase(lambda,N,H,thi
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Figure B.1: Picture of the surface
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An Omega type K thermocouple is con
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Figure B.2: Diagram of surface trea
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Figure B.3: User interface for the
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option when the program is started
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Figure B.7: Various subVIs called b
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Figure B.10: Program diagram for Ch
- Page 257 and 258:
The Auto program uses these same su
- Page 259 and 260:
Figure C.1: Force balance diagram f
- Page 261 and 262:
Figure C.2: Plot of cos θ vs. γlv
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Figure C.4: Plot of cos θ vs. γlv
- Page 265 and 266:
Equation C.8 which upon rearrangeme
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and electron-donor (γ - ) paramete
- Page 269 and 270:
where θ0 is the contact angle in v
- Page 271 and 272:
Kwok, et al reinforce the relation
- Page 273 and 274:
Figure C.7: Correlation between mea
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If one requires only an estimation
- Page 277 and 278:
32. Kwok, D.Y., et al., Langmuir, 1
- Page 279 and 280:
a separate delimited text file for
- Page 281 and 282:
2 -2 M -1 1; AreaPerTest 1.20197e+0
- Page 283 and 284:
ins1 = strcat('< ',num2str(edges(2)
- Page 285 and 286:
n(2) = n(2) + 1; case 3 n(3) = n(3)
- Page 287 and 288:
Appendix E: Estimation of Downstrea
- Page 289 and 290:
Figure E.1: Experimental FTIR appar
- Page 291 and 292:
Figure E.2: Vapor pressure apparatu
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Absorbance 0.16 0.14 0.12 0.1 0.08
- Page 295 and 296:
Absorbance 0.3 0.25 0.2 0.15 0.1 0.
- Page 297 and 298:
Absorbance 2.45 1.95 1.45 0.95 0.45
- Page 299 and 300:
Figure E.9: Comparison of experimen
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ln(Psat (Torr)) 1.5 1 0.5 0 -0.5 -1
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FOTS Concentration (mol/liter) 2.0E
- Page 305 and 306:
Bouwhuis, G., et al., Principles of
- Page 307 and 308:
Constantine, C., R. Westerman, and
- Page 309 and 310:
Gun'ko, V.M., et al., Inter. J. Mas
- Page 311 and 312:
Lee, L.-H., J. Coll. Int. Sci., 199
- Page 313 and 314:
Pellerite, M.J., E.J. Wood, and V.W
- Page 315 and 316:
The Aldrich Library of FT-IR Spectr
- Page 317:
VITA Todd Christopher Bailey was bo