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electron beam lithography. Each technique has its advantages and disadvantages, and all are expensive. If the mainstream microprocessor technology is to progress, then there must be a significant departure from the lithography cost trend in the near future. 1.4 IMPRINT LITHOGRAPHY Many research groups are exploring alternative forms of imprint lithography as an inexpensive patterning method capable of sub-100 nm resolution on various substrates. 8-13 Imprint equipment requires precision X-Y stages, layer-to-layer alignment systems, and wafer handling equipment common to other lithography techniques, but imprint lithography realizes significant cost savings because it does not require lasers or projection optics. Imprint lithography has several important advantages over conventional optical lithography and NGL techniques: It is non- optical by design, and the resolution appears to be limited only by the structures that can be generated in a master template. Imprint templates are typically fabricated using imaging tools such as electron beam writers that provide high resolution but lack the throughput required for mass production. By using imprint templates defined by e-beam lithography, imprint lithography makes use of this resolution capability without being limited by e-beam throughput issues. Since the main advances required to improve resolution are expected to be in the area of the imprint template development and process chemistry, an imprint tool built for one technology generation could conceivably extend to future technology nodes. There are many imprint lithography techniques, all based on the concept that a template or mold with a prefabricated topography is pressed into a displaceable 9
material. This material takes the shape of the pattern defined in the template, and through some curing process, the shaped material is hardened into a solid. Researchers systematically studied imprint lithography techniques in the 1990s. 8- 11,14,15 The research approach is divided between imprinting into a thermoplastic or thermoset polymer, and imprinting into an ultraviolet (UV) light-curable material. Chou and coworkers 8,16,17 use an imprint technique based on embossing a thin film of poly(methyl methacrylate) (PMMA), or similar polymer, during a heating cycle that allows the film to conform to a template containing a topography. The group has become quite adept at producing structures that do not require overlay registration. Chou and coworkers have demonstrated high density magnetic storage disks 18 and high density compact disks, 19 waveguide polarizers, 20 photodetectors 21 and light-emitting structures, 22 field effect transistors 23 and single-electron transistor memory, 24 none of which required significant overlay control. Scheer and coworkers 15,25 have also focused on high temperature imprint lithography, although their work is more related to the fundamentals of imprint patterning. The authors found that the process is limited by material transport, and that pressures of around 100 bar and temperatures 90 ºC above the polymer glass transition temperature (Tg) are optimal for material displacement. 15,25 These studies were performed using imprint molds with a global average pattern density near 50%. The authors conclude that regular repeating patterns and areas in positive tone are ideal for this type of patterning, 15 where “positive” pattern areas are defined to require less material displacement, and conversely for “negative” pattern areas. Jaszewski, et al. 14 have developed a “hot embossing” technique of patterning, which is fundamentally similar to the Chou 8 and Scheer 15 methods. The 10
Page 1 and 2: Copyright by Todd Christopher Baile
Page 3 and 4: Imprint Template Advances and Surfa
Page 5 and 6: Dedication This is dedicated to my
Page 7 and 8: I want to thank those who aided in
Page 9 and 10: mitigation of the shift in feature
Page 11 and 12: Chapter 4: Review of the Reaction o
Page 13 and 14: Appendix D: Conversion of KLA Data
Page 15 and 16: List of Figures Figure 1.1. Schemat
Page 17 and 18: Figure 5.3: Water contact angle and
Page 19 and 20: Figure 7.25: Images captured during
Page 21 and 22: Figure B.8: Program diagram for Swi
Page 23 and 24: “source” and “drain” region
Page 25 and 26: computing power is required. Microp
Page 27 and 28: Photoresist Substrate Mask hυ hυ
Page 29: Tool Price ($) $100,000,000 $10,000
Page 33 and 34: planarizing/transfer layer was coat
Page 35 and 36: patterned relief structures is alig
Page 37 and 38: Contact lithography predates the pr
Page 39 and 40: 8. Chou, S.Y., P.R. Krauss, and P.J
Page 41 and 42: SFIL IMPRINT PROCESS DEVELOPMENT Ch
Page 43 and 44: substrate that changes in chemical
Page 45 and 46: In modern photomask production, imp
Page 47 and 48: and CD-SEM inspection, and also all
Page 49 and 50: Requirements for Transparent Conduc
Page 51 and 52: quartz substrates. Percent transmis
Page 53 and 54: a) b) Figure 2.5: (a) 30 nm trenche
Page 55 and 56: nm, so the normalization to film th
Page 57 and 58: with increasing anneal time, up to
Page 59 and 60: 2.12 shows line/space features poss
Page 61 and 62: a) b) Figure 2.14: SEM micrographs
Page 63 and 64: a) c) e) Index Index Index 2.7 2.5
Page 65 and 66: function of ITO thickness is much g
Page 67 and 68: esidual layer only. The right plot
Page 69 and 70: it is mentioned here for context. T
Page 71 and 72: Some results are shown in Figure 2.
Page 73 and 74: 5. Widden, T.K., et al., Nanotechno
Page 75 and 76: 45. Lewis, B.G. and D.C. Paine, MRS
Page 77 and 78: 3.1 BACKGROUND Chapter 3: SFIL Etch
Page 79 and 80: 3.2 EXPERIMENTAL For the imprinting
Page 81 and 82:
The fluorinated additive experiment
Page 83 and 84:
Formulation M2 did not polymerize.
Page 85 and 86:
adhesive forces at the two interfac
Page 87 and 88:
Chapter 4: Review of the Reaction o
Page 89 and 90:
such as annealing. Each of these ex
Page 91 and 92:
on colloidal silica particles. 9 He
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Figure 4.2: From Chuang, et al. 16
Page 95 and 96:
was achieved by exposing the surfac
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Cras, et al. 37 compared various we
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where X is either an alkoxy group o
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with increasing temperature. They a
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from liquid and supercritical CO2.
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hydrolyzed intermediates. These res
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limiting film thickness. This is in
Page 109 and 110:
authors observed a decrease in the
Page 111 and 112:
to form SAM films of at least moder
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was able to predict the networking
Page 115 and 116:
39. Ruzyllo, J., et al., Proc. Elec
Page 117 and 118:
77. Allara, D., A.N. Parikh, and F.
Page 119 and 120:
Chapter 5: SFIL Imprint Template Re
Page 121 and 122:
5.1.3 Self-Assembled Monolayer Rele
Page 123 and 124:
ITO, followed by plasma-enhanced ch
Page 125 and 126:
5.3 RESULTS AND DISCUSSION 5.3.1 Fu
Page 127 and 128:
a) b) Water Contact Angle F:Si Area
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Imprinting Durability of FOTS on Fu
Page 131 and 132:
At the time of this writing, no oth
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Methanol adsorption below 130 K fol
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of the SiO2 layer to define the tem
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treatment films of at least modest
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imprinting durability. Due to the r
Page 141 and 142:
Chapter 6: Effect of Substrate Hydr
Page 143 and 144:
The Ag 3d5/2 XPS peak at 368.3 eV f
Page 145 and 146:
dθ Equation 6.8 ( ) 2 OH , 3 3 −
Page 147 and 148:
Concentration (nm -2 ) 5 4.5 4 3.5
Page 149 and 150:
Mass (mg) 14 13.9 13.8 13.7 13.6 13
Page 151 and 152:
silanol coverage for temperatures b
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increasing film density with increa
Page 155 and 156:
7.1 INTRODUCTION DEFECT ANALYSIS FO
Page 157 and 158:
The fundamental question to be answ
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placement in the die array must be
Page 161 and 162:
an exposure source that is used to
Page 163 and 164:
the transfer layer. The BARC was sp
Page 165 and 166:
Figure 7.5: UT MER South cleanroom
Page 167 and 168:
English rating denotes the number o
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wall of the cleanroom was a large c
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The results of the particles genera
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the wafer chuck, and we have attemp
Page 175 and 176:
7.4 RESULTS & DISCUSSION 7.4.1 Temp
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a) that protects the master from co
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determines the absolute value of co
Page 181 and 182:
a) b) c) Figure 7.16: Resist images
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Figure 7.18: Evolution of slope (so
Page 185 and 186:
Figure 7.19: SSE for the data in Fi
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and 92 in the denominator is 3.95;
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a) b) Figure 7.22: (a) Obvious patt
Page 191 and 192:
Table 7.1: Percent standard error i
Page 193 and 194:
a) c) e) Defect Density (cm -2 ) De
Page 195 and 196:
defect bins reveal an increase in d
Page 197 and 198:
detected defects in one particular
Page 199 and 200:
imprints show little or no increase
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a) b) Defect Density (cm -2 ) Defec
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Figure 7.35 shows a defect composed
Page 205 and 206:
a) b) c) d) e) f) g) h) i) j) k) Fi
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a) b) c) Figure 7.34: Example defec
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a) b) c) Figure 7.36: Example defec
Page 211 and 212:
Figure 7.37: Stress-strain comparis
Page 213 and 214:
7.6 CONCLUSIONS The SFIL cleanroom
Page 215 and 216:
Chapter 8: Effect of Film thickness
Page 217 and 218:
8.2 EXPERIMENTAL A Woollam M-2000 s
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a) b) Figure 8.4. (a) Irradiance sp
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intensity of the Xe lamp, and RspCC
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a) b) Contrast Contrast 10 9 8 7 6
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a) b) Figure 8.7. Contrast response
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a) b) c) Transfer Layer Thickness (
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contrast prior to subsequent etchin
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The etch barrier imprinting fidelit
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evaluation needs to be undertaken t
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where η0 and ηm are the optical a
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N_SiO2 = SiO2(2,2:3); t_SiO2 = 100;
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SFILCalc.m function data = SFILcalc
Page 241 and 242:
function [a] = phase(lambda,N,H,thi
Page 243 and 244:
Figure B.1: Picture of the surface
Page 245 and 246:
An Omega type K thermocouple is con
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Figure B.2: Diagram of surface trea
Page 249 and 250:
Figure B.3: User interface for the
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option when the program is started
Page 253 and 254:
Figure B.7: Various subVIs called b
Page 255 and 256:
Figure B.10: Program diagram for Ch
Page 257 and 258:
The Auto program uses these same su
Page 259 and 260:
Figure C.1: Force balance diagram f
Page 261 and 262:
Figure C.2: Plot of cos θ vs. γlv
Page 263 and 264:
Figure C.4: Plot of cos θ vs. γlv
Page 265 and 266:
Equation C.8 which upon rearrangeme
Page 267 and 268:
and electron-donor (γ - ) paramete
Page 269 and 270:
where θ0 is the contact angle in v
Page 271 and 272:
Kwok, et al reinforce the relation
Page 273 and 274:
Figure C.7: Correlation between mea
Page 275 and 276:
If one requires only an estimation
Page 277 and 278:
32. Kwok, D.Y., et al., Langmuir, 1
Page 279 and 280:
a separate delimited text file for
Page 281 and 282:
2 -2 M -1 1; AreaPerTest 1.20197e+0
Page 283 and 284:
ins1 = strcat('< ',num2str(edges(2)
Page 285 and 286:
n(2) = n(2) + 1; case 3 n(3) = n(3)
Page 287 and 288:
Appendix E: Estimation of Downstrea
Page 289 and 290:
Figure E.1: Experimental FTIR appar
Page 291 and 292:
Figure E.2: Vapor pressure apparatu
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Absorbance 0.16 0.14 0.12 0.1 0.08
Page 295 and 296:
Absorbance 0.3 0.25 0.2 0.15 0.1 0.
Page 297 and 298:
Absorbance 2.45 1.95 1.45 0.95 0.45
Page 299 and 300:
Figure E.9: Comparison of experimen
Page 301 and 302:
ln(Psat (Torr)) 1.5 1 0.5 0 -0.5 -1
Page 303 and 304:
FOTS Concentration (mol/liter) 2.0E
Page 305 and 306:
Bouwhuis, G., et al., Principles of
Page 307 and 308:
Constantine, C., R. Westerman, and
Page 309 and 310:
Gun'ko, V.M., et al., Inter. J. Mas
Page 311 and 312:
Lee, L.-H., J. Coll. Int. Sci., 199
Page 313 and 314:
Pellerite, M.J., E.J. Wood, and V.W
Page 315 and 316:
The Aldrich Library of FT-IR Spectr
Page 317:
VITA Todd Christopher Bailey was bo
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