DS 7-7R 17-12R Semiconductor Fabrication Facilities ... - FM Global

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7-7R To overcome the interim period until the standards are approved, CEN has decided to publish an European Prestandard ENV 1631 Cleanroom Technology — Design construction and operation of cleanrooms and clean airdevices, which will be automatically withdrawn once the ISO standards 14644-4 and -5 are approved and published. 4.5.1 ISO 14644-1 Air Cleanliness Classification The new ISO air cleanliness classification is based on the following formula: C n =10 N (0.1/D) 2.08 where C n = max. number of particles per m 3 meter with a diameter equal to or larger than the particles under consideration, rounded to the nearest whole number, using no more than three significant digits N = The ISO classification number D = The diameter of the particles under consideration 0.1 = A constant with dimensions in microns. The following tables show the relationship between the ISO classification and the particle size and a comparison between the ISO classification and the commonly used US 209E classification system. While it is likely that the previous form to describe a cleanroom classification, i.e., Class 1, Class 10, etc., will continue to used for some time, increasingly cleanrooms will be specified using the international terms, defined in ISO14644-1. Table 9. Selected airborne particulate cleanroom classes for cleanrooms and cleanzones defined by ISO 14644-1 Maximum concentration limits (particles/m3 of air) for particles equal to and larger than the considered sizes (in nanometers) shown below (concentration limits are calculated in accordance with formula 1) ISO Classification Number (N) 100 nm 200 nm 300 nm 500 nm 1000 nm 5000 nm ISO Class 1 10 2 ISO Class 2 100 24 10 4 ISO Class 3 1000 237 102 35 8 ISO Class 4 10000 2370 1020 352 83 ISO Class 5 100000 23700 10200 3520 832 29 ISO Class 6 1000000 237000 102000 35200 8320 293 ISO Class 7 352000 83200 2930 ISO Class 8 3520000 832000 29300 ISO Class 9 35200000 8320000 293000 Particles per m 3 greater than or equal to 0.5 microns US 209E (1992) Table 10. Comparison between different Cleanroom Class Standards US 209E (Imperial Equivalent) REFERENCE DOCUMENT 17-12R SEMICONDUCTOR FABRICATION FACILITIES Page 32 EEC cGMP 1989 France AFNOR 1989 Germany VDI 2083 1990 UK BS 5295 1989 Japan JIS B 9920 1989 ISO EN 14644-1 1998 DIS/FDIS 1 3.5 0 2 2 10 M1.0 35 M1.5 1 1 3 3 100 M2.0 353 M2.5 10 2 4 4 1,000 M3.0 3,530 M3.5 100 A + B 4,000 3 E or F 5 5 10,000 M4.0 35,300 M4.5 1,000 4 G or H 6 6 100,000 M5.0 353,000 M5.5 10,000 C 400,000 5 J 7 7 1,000,000 M6.0 3,530,000 M6.5 100,000 D 4,000,000 6 K 8 8 10,000,000 M7.0 100,000,000 M7.5 1,000,000 40,000,000 L 9 9 ©2003 Factory Mutual Insurance Company. All rights reserved.
5.0 SEMICONDUCTOR TERMINOLOGY Alignment—The positioning of a mask or reticle with respect to the wafer. Anneal—A high temperature processing step (usually the last one), designed to repair defects in the crystal structure of the wafer. APCVD—Atmospheric Pressure Chemical Vapor Deposition Art work—The large CAD (computer aided design) drawings of the various layers of a circuit. It is used to make the master mask for each layer. Ashing—Process in which photoresist is removed from the wafer by heating it and turning it to ash. Automated Cylinder Valve (ACV)—The best form of ESOV, this is a normally closed, pneumatically held open valve assembly that replaces the manual valve on top of the gas cylinder. This allows for automatic opening and closing of the valve by an automated gas cabinet purge program, and automatic shut down of the gas cylinder in response to detection of a gas leak, for example. Bipolar—Literally, having two poles. A transistor consisting of a base, emitter and collector. It has both N and P type carriers present. Boat—A vessel, usually made of quartz or silicon used for holding wafers during high temperature furnace processing. Bonding—The connecting of a wire from the package leads to the pads (bonding pads) of the circuit. BPSG—Borophosphosilicate glass. Bubbler—An apparatus in which a carrier gas is transmitted through a heated liquid causing portions of the liquid to be transported with the gas. Buffered Oxide Etch—A mix of hydrogen fluoride (HF) and ammonium fluoride (NH 4F) used to promote oxide etching at a slow, controlled rate. Burn-in—Term given to heat soaking components to determine operational reliability at elevated temperatures or temperature fluctuations. Carrier—A vessel made of plastic used for holding wafers (typically 25) during nonprocessing times. CGA—Compressed Gas Association. Chip (Die)—The sliver of silicon on which the tiny devices of the integrated circuit are formed. Contact Aligner—An aligner tool which clamps the wafer and mask into a tight contact before the resist exposure cycle. Cleanroom Environment—An enclosed area where the amount and size of particulate matter in air, temperature, humidity, and pressure are closely controlled. Cluster tool—Several process stations or tools served by one loading-unloading chamber and wafertransport system. CMP—Chemical Mechanical Polishing—A wafer flattening and polishing process that combines chemical removal with mechanical buffing. Used for polishing/flattening wafers after crystal growing and wafer planarization during the wafer fabrication process. CMOS—Complementary metal oxide semiconductor. Coke Cans–A noncombustible, pressurized canister containing photoresist or developer which feeds the spinner in the masking operation. These canisters are usually pressurized with nitrogen and are equipped with metallic or plastic tubes connected to the spinners. Contact Aligner—An aligner tool that clamps the wafer and mask into a tight contact before the resist exposure cycle. CVD—Chemical Vapor Deposition. REFERENCE DOCUMENT 7-7R SEMICONDUCTOR FABRICATION FACILITIES 17-12R Page 33 Deep Ultraviolet (DUV)—A light wavelength often used to expose photoresist which has the advantage of an ability to produce smaller image widths. ©2003 Factory Mutual Insurance Company. All rights reserved.
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DS 7-7R 17-12R Semiconductor Fabrication Facilities ... - FM Global

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