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DS 7-7R 17-12R Semiconductor Fabrication Facilities ... - FM Global

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7-<strong>7R</strong><br />

2.1.1.1 Silane<br />

Silane, which is discussed in detail under Section 2.6, more so than other gases used in semiconductor manufacturing,<br />

can lead to severe exposures. It is a stable gas but is pyrophoric, that is, under certain conditions,<br />

it can spontaneously ignite.<br />

The trend today is to use higher concentrations of silane. In addition, silane is being used as a carrier gas<br />

for arsine and phosphine. In the event of a leak, the pyrophoric silane reaction would likely consume the<br />

poisonous arsine and phosphine. The process properties of silane mixtures can be found in Table 2.<br />

Percent Silane<br />

Table 2. Silane Mixtures<br />

Carrier Gas Hazard<br />

2.0 Inert Flammable<br />

>1.0 Any Flammable<br />

>2.0 Hydrogen Pyrophoric<br />

>3.0 Inert Pyrophoric<br />

2.1.1.2 Dichlorosilane<br />

Dichlorosilane (DCS) is a pyrophoric, toxic, corrosive and colorless gas. Its boiling point is 47°F (8.3°C).<br />

The minimum autoignition temperature is 111°F (44°C).<br />

DCS is used for a variety of chemical vapor deposition reactions. It is used to form epitaxial layers as well<br />

as silicon dioxide, silicon nitride, and polysilicon layers.<br />

DCS tends to slowly decompose during storage. This is only a problem in the presence of heat and/or catalysts<br />

such as amines or Lewis acids. Decomposition products are silane, monochlorosilane, trichlorosilane<br />

and silicon tetrachloride.<br />

Due to the corrosive nature of DCS, there is concern regarding its effect on carbon steel cylinders and valves.<br />

Therefore, no more than a 12-month shelf life is recommended.<br />

Minimum ignition energy (MIE) is 0.0154 mJ (second to hydrogen which is the lowest measured MIE).<br />

Combustion produces amorphous silica, water, hydrogen chloride gas, and chlorine.<br />

Due to its low vapor pressure (9 psi [0.6 bar]) and concern about proper distribution flow, there is a preference<br />

in the industry to locate process cylinders of DCS close to the process tool to minimize the length of distribution<br />

pipe. However, this results in process DCS cylinders being located in service chases and subfabs<br />

which, in turn, results in an unnecessary exposure to the cleanroom, process tools and related support<br />

equipment.<br />

Some facilities have overcome the low vapor pressure distribution flow issue by insulating and heat tracing<br />

the distribution piping. This allows them to locate process DCS cylinders in properly arranged process gas<br />

distribution rooms which do not expose the cleanroom, process tools and related support equipment.<br />

2.1.1.3 Trichlorosilane<br />

Another chlorinated silane gas is trichlorosilane (TCS) which is used to produce polycrystalline silicon and<br />

to form silicon epitaxial layers. With a boiling point of 89°F (32°C) and a flash point of 7°F (–14°C), TCS is<br />

normally found in liquid form.<br />

2.1.1.4 Chlorine Trifluoride<br />

REFERENCE DOCUMENT<br />

<strong>17</strong>-<strong>12R</strong> SEMICONDUCTOR FABRICATION FACILITIES<br />

Page 6<br />

Chlorine trifluoride is used to clean chemical vapor deposition (CVD) reactor chambers. It is a corrosive, colorless<br />

gas and a powerful oxidizer, which immediately ignites many organic compounds. It also ignites many<br />

metals at elevated temperatures, and reacts violently with water. Chlorine trifluoride is hypergolic, which<br />

means that it ignites organic fuels on contact. No ignition source or air is required.<br />

The installation of automatic sprinklers in gas cabinets containing chlorine trifluoride is not recommended<br />

due to its extreme reactivity with water. The reaction products with water include hydrogen fluoride, chlorine<br />

dioxide, hydrogen chloride and other hazardous by-products. In the event of a release, water is the major<br />

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