AVOIDING FURNACE SLIP IN THE ERA OF SHALLOW ... - MEMC
AVOIDING FURNACE SLIP IN THE ERA OF SHALLOW ... - MEMC
AVOIDING FURNACE SLIP IN THE ERA OF SHALLOW ... - MEMC
You also want an ePaper? Increase the reach of your titles
YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.
15. L. D. Dyer, H. R. Huff, and W. W. Boyd, J. Appl. Phys., 42, 5680 (1971).<br />
16. Curtis Hall, private communication (1991).<br />
17. Robert H. Nilson and Stewart K. Griffiths, in Defects in Silicon, T. Abe, W. M.<br />
Bullis, S. Kobayashi, W. Lin, and P. Wagner, Editors, PV 99-1, p. 119, The<br />
Electrochemical Society Proceedings Series, Pennington, NJ (1999).<br />
18. S. K. Griffiths and R. H. Nilson, in Proceedings of Third 300mm Wafer Specification<br />
Workshop, Attachment 8, SEMICON WEST (1995). See also M. Akatsuka, K. Sueoka,<br />
H. Katahama, and N. Adachi, J. Electrochem Soc., 146, 2682 (1999).<br />
19. S. M. Hu and W. J. Patrick, J. Appl. Phys., 46, 1869 (1975).<br />
20. I. Yonenaga, K. Sumino, and K. Hoshi, J. Appl. Phys., 56, 2346 (1984).<br />
21. D. Maroudas and R. A. Brown, in Defects in Silicon II, W. M. Bullis, U. Göesele,<br />
and F. Shimura, Editors, PV 91-9, p. 181, The Electrochemical Society Proceedings<br />
Series, Pennington, NJ (1991).<br />
22. S. Senkader, P. R. Wilshaw, and R. J. Falster, J. Appl. Phys., 89, 4803 (2001).<br />
23. J. D. Lawrence and H. L. Tsai, in Oxygen, Carbon, Hydrogen and Nitrogen in<br />
Crystalline Silicon, J. C. Mikkelsen, S. J. Pearton, J. W. Corbett, and S. J. Pennycook,<br />
Editors, p. 389, Materials Research Society, Pittsburgh (1986).<br />
24. Oxygen concentrations were measured by the ASTM method F121-79 using a<br />
conversion factor of 9.6 Æ, where Æ is the absorption coefficient in cm-1 .<br />
25. M. Obry, W. Bergholz, H. Cerva, W. Kürner, M. Schrems, J.-U. Sachse, and R.<br />
Winkler, in Defects in Silicon, T. Abe, W. M. Bullis, S. Kobayashi, W. Lin, and P.<br />
Wagner, Editors, PV 99-1, p. 133, The Electrochemical Society Proceedings Series,<br />
Pennington, NJ (1999).<br />
26. Hideo Miura, Norio Ishitsuka, Norio Suzuki, Kiyonori Ohyu, and Shuji Ikeda, in<br />
ULSI Process Integration II, C, L. Claeys, F. Gonzales, J. Murota, and K. Saraswat,<br />
Editors, PV 2001-02, p. 373, The Electrochemical Society Proceedings Series,<br />
Pennington, NJ (2001).<br />
27. I. V. Peidous, K. V. Loiko, N. Balasubramanian, and T. Schuelke, in High Purity<br />
Silicon VI, C. L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stallhofer, and H. J.<br />
Dawson, Editors, PV 2000-17, p. 180, The Electrochemical Society Proceedings Series,<br />
Pennington, NJ (2000).<br />
28. K. Parekh, C. Mouli, M. Hermes, and F. Gonzales, in ULSI Process Integration II, C,<br />
L. Claeys, F. Gonzales, J. Murota, and K. Saraswat, Editors, PV 2001-02, p. 359, The<br />
Electrochemical Society Proceedings Series, Pennington, NJ (2001).<br />
29. James Boyle and Raanan Zehavi, Solid State Technology, p. 73, August 2001.<br />
Page 785