SON(rcHEMICAI, SYNIIIISIS AIID CIIARACTERIZATION OF PR.ECT ...

1.4.3 Setrlor Architectur€rg
se$inLYPq@itL
B6i&s scls E rdi,l optinizlioa BoE iEpondt is to tailo..l@trical FoFni6 of
inc s.IM by fsbdcaljlg wicty of ponm pt.Ed tutrdductiog subsrrdo dd thu to
selecl suilable delign for ga losing device (Figw l8). E&h tlesign c& b.hav. v.r,
ditr@tly whcn exFsd to g!.. ft. adv.dn8.s Nciat d with cistancc tailoting @
pdiculdly inporlrnt for &rcloping afford.blc eldEo.ics for pt!)c*iDs eNr olQur
M&y c€@ic ndeials crhbn vcry hig! $ist!n6, rcquirinS complical.d cituiEv to
pr€ciely h.6uc in fi€ MQ rrg€, Medwhile ollter materials h.ve higl conductivity,
d.liry it difficull to d.rd &cl!e in GidlM aftd ga .xPos@ Typically dopdt
b'r.rid is .ddcd ro alrs Bistdrc.s, wtich dierr.ly itl{,te th. s@ilivity Esloe
tim., FetoB like, tdtide si&, addition of suitabte dopmt, tubsrrate patt n plsting
d6ig4 thjckss &d uifodiiy of 6ln nNl b€ 1aken i o@oulwhdon wels to
d.velo! rnd d.@trsllle ! ** s@r d.vi4.
1.4.4 s.ruiry Mechlnitm
Alrhoueh md.l oxide sosts hiv. bcd sludicd for ov.r 30 yc4, th.tc e siSnificdt
dimcuu€s in m.tils a devie that fspoddt el.cdrely b a 8a
of inte!*t whil€ mdv
d@n6 dirt o! thc b6r ncrhod 1o cretc ! *l@tiv. ddie. e uddtardinS of baeic
gs $sitivity pnncipls @ b. uetul i! cxpbjniog the problcn
Nu€oc Mt riats hlv€ b..o Fpoded to bc @blc d d.r'l oxide *sof in luding
boln sitrsL (c,g", Z!O, SBO!, WO! TiO1, ard F€rO, ltd multiaFpoftnt oxi