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Switched-Capacitor Circuits - University of Toronto

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Double-Poly <strong>Capacitor</strong>s<br />

C p1<br />

metal<br />

poly2<br />

poly1<br />

<strong>University</strong> <strong>of</strong> <strong>Toronto</strong><br />

Basic Building Blocks<br />

C 1<br />

C p2<br />

thin oxide<br />

(substrate - ac ground)<br />

cross-section view<br />

thick oxide<br />

metal<br />

bottom plate<br />

C p1<br />

• Substantial parasitics with large bottom plate<br />

capacitance (20 percent <strong>of</strong> )<br />

• Also, metal-metal capacitors are used but have even<br />

larger parasitic capacitances.<br />

Switches<br />

Symbol<br />

p-channel<br />

<br />

v 1<br />

v 1<br />

<strong>University</strong> <strong>of</strong> <strong>Toronto</strong><br />

C 1<br />

Basic Building Blocks<br />

<br />

<br />

v 2<br />

v 2<br />

C 1<br />

C p2<br />

equivalent circuit<br />

3 <strong>of</strong> 60<br />

© D. Johns, K. Martin, 1997<br />

<br />

• Mosfet switches are good switches.<br />

— <strong>of</strong>f-resistance near G range<br />

— on-resistance in 100 to 5k<br />

range (depends on<br />

transistor sizing)<br />

• However, have non-linear parasitic capacitances.<br />

<br />

v 1<br />

v 1<br />

<br />

v 2<br />

n-channel<br />

transmission<br />

gate<br />

v 2<br />

4 <strong>of</strong> 60<br />

© D. Johns, K. Martin, 1997

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