DRAM Technology

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MOS-C ? Metal-Oxide-Semiconductor Capacitor MOSFET ? Metal-Oxide-Semiconductor Field Effect Transistor CMOS ? Oxide Complementary MOSFET : NMOS + PMOS Low Power V GB N+ Gate 2 terminal 4 terminal N+ N+ P-Substrate P-Substrate P-Substrate V GS B Short channel effect MOS-C MOSFET (Long Channel) MOSFET (Short Channel) <strong>DRAM</strong> <strong>Technology</strong> SK hynix Lecture for POSTECH Page 18 V DS V GS B V DS
NMOS & PMOS Structure Vs NMOSFET PMOSFET Vg(Vgs>0) Vd(Vds>0) N+ Poly oxide e N+ N+ P-type 기판(P-Well) Vb(Vbs0, Vbs
Page 1 and 2: DRAM Technology Research & Developm
Page 3 and 4: Contents • Overview • DRAM Fund
Page 5 and 6: Chips DRAM Technology SK hynix Lect
Page 7 and 8: Classification of Memory DRAM Techn
Page 9 and 10: History of DRAM Dr. Robert H. Denn
Page 11 and 12: DRAM Producer ▷ Elpida ▷ Hynix
Page 13 and 14: DRAM Scaling Trend Minimum Feature
Page 15 and 16: DRAM 제품 제조 과정 Design Ci
Page 17: What is MOSFET ? Source 0V Gate Gat
Page 21 and 22: DRAM Chip Architecture 1 MAT Cell A
Page 23 and 24: DRAM Cell Word Line SN SN SN Gate C
Page 25 and 26: Basic DRAM operation Capacitor (Cs)
Page 27 and 28: Basic Operation : Write V PP Total
Page 29 and 30: Basic Operation : Retention Field O
Page 31 and 32: DRAM Scaling • Scaling Methods
Page 33 and 34: Scaling 1. Design Rule . 80nm → 6
Page 35 and 36: Folded vs. Open BL Scheme SA Scheme
Page 37 and 38: DRAM Technology Node Scaling Challe
Page 39 and 40: Cell Transistor : Considerations on
Page 41 and 42: Why Scaling ? T pd CV I C ox WLV
Page 43 and 44: MOSFET Scaling Method S Wd eff COX
Page 45 and 46: How to Increase the Transistor Perf
Page 47 and 48: Homework 1. “Peripheral Transisto

DRAM Technology

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