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DRAM Technology

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<strong>DRAM</strong> Cell<br />

Word Line<br />

SN SN<br />

SN<br />

Gate<br />

Cell capacitor<br />

(Charge storage)<br />

Si<br />

BL<br />

Bit Line<br />

capacitor<br />

1. Word Line<br />

Access Transistor Gate Control ( On/Off )<br />

Storage Node High Data 보다 승압된 젂원 Level 사용<br />

Poly-Si Layer (또는 WSi 2, W)<br />

2. Bit Line<br />

Data Transfer Line<br />

Read/Write 공용<br />

Half Vcore level Precharge for Power Saving<br />

3. Access Transistor<br />

Switch기능의 NMOS Transistor 1개<br />

Refresh 특성강화 위해 High Vt 설정<br />

4. Capacitor<br />

Data 저장 장소<br />

Storage Node의 Charge량에 의해 Data유지<br />

REFRESH 필요<br />

<strong>DRAM</strong> <strong>Technology</strong> SK hynix Lecture for POSTECH<br />

Page 23

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