DRAM Technology
DRAM Technology
DRAM Technology
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<strong>DRAM</strong> Cell<br />
Word Line<br />
SN SN<br />
SN<br />
Gate<br />
Cell capacitor<br />
(Charge storage)<br />
Si<br />
BL<br />
Bit Line<br />
capacitor<br />
1. Word Line<br />
Access Transistor Gate Control ( On/Off )<br />
Storage Node High Data 보다 승압된 젂원 Level 사용<br />
Poly-Si Layer (또는 WSi 2, W)<br />
2. Bit Line<br />
Data Transfer Line<br />
Read/Write 공용<br />
Half Vcore level Precharge for Power Saving<br />
3. Access Transistor<br />
Switch기능의 NMOS Transistor 1개<br />
Refresh 특성강화 위해 High Vt 설정<br />
4. Capacitor<br />
Data 저장 장소<br />
Storage Node의 Charge량에 의해 Data유지<br />
REFRESH 필요<br />
<strong>DRAM</strong> <strong>Technology</strong> SK hynix Lecture for POSTECH<br />
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