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Leakage Current Components Input = 0 Output = 1 P + P + n + n + IDS I DW Reverse biased PN-junction leakage Subthreshold leakage ID Punch-through leakage Gate Induced Drain Leakage (GIDL) IG P + Drain Induced Barrier Lowering (DIBL) n + V DD P + N-well substrate Tunneling leakage
Major I DDQ Components I D (Log scale) GIDL Weak inversion & Junction leakage 0 V G DIBL VD = 4.0 V VD = 2.7 V V D = 0.1 V
Page 1 and 2:
“Research is to see what everyone
Page 3 and 4:
Outline Introduction Problem Defi
Page 5 and 6:
Smaller Needle, Bigger Haystack ©
Page 7 and 8:
Basic Testing Methodology Input 1 0
Page 9 and 10:
IC Testing Methods Functional test
Page 11 and 12:
Leakage Current (I DDQ) Test Prima
Page 13 and 14:
Defect Types Active (pattern-depen
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Conventional I DDQ Testing Single
Page 17 and 18:
ITRS Projections for I DDQ Year Gat
Page 19 and 20:
I DDQ and Defect Severity Frequency
Page 21 and 22:
I DDQ Only a Part of the Puzzle Inc
Page 23 and 24:
Why Use Outlier Detection? Continu
Page 25 and 26:
Outlier Identification Methods Rel
Page 27 and 28:
Frequency No Silver Bullet 180 160
Page 29 and 30: Approach 1: Reducing Fault-free I D
Page 31 and 32: Die 1 I DDQ Variation Level 2 Level
Page 33 and 34: Die 1 and Die 2 I DDQ Variation Die
Page 35 and 36: Four Dice From a Wafer Difficult to
Page 37 and 38: Current Signature [Gattiker,Maly]
Page 39 and 40: Differential/Delta I DDQ [Thibeault
Page 41 and 42: Current Ratios [Maxwell et al.] CR
Page 43 and 44: Threshold Selection Challenge Max I
Page 45 and 46: Motivation: Spatial Correlation Si
Page 47 and 48: Local Neighborhood Definition Cente
Page 49 and 50: Correlation Methods Spatial/plane
Page 51 and 52: Neighbor Current Ratios (NCR) Two
Page 53 and 54: Max NCR Max NCR CR/NCR Insights 100
Page 55 and 56: Immediate Neighbor Difference I DDQ
Page 57 and 58: I DDQ & Flush Delay Correlation Flu
Page 59 and 60: Research Plan - I Extensive analys
Page 61 and 62: Research Contributions Systematic
Page 63 and 64: Summary Defect-based VLSI testing
Page 65 and 66: Backup Slides
Page 67 and 68: I/P Pattern Independent Defect O/P
Page 69 and 70: Process Variation Levels Frequency
Page 71 and 72: Technology Impact on Testing Reduc
Page 73 and 74: Scaling Implications on IOFF I OFF
Page 75 and 76: Non-uniform Scaling Trends Source :
Page 77 and 78: “All Pass” Chips I DDQ Variatio
Page 79: Leakage Current Components Input =
Page 83 and 84: Two Signature Types IDDQ (uA) 54.5
Page 85 and 86: Handling Defect Clustering Scratch
Page 87 and 88: Why I DDQ Correlates to Delay? Sma
Page 89 and 90: All Tests Are Needed Distribution o
Page 91 and 92: Fewer Vectors,Higher Coverage Fault
Page 93 and 94: Wafer-level Analysis: Advantages D
Page 95 and 96: Delta I DDQ Illustration First meas
Page 97 and 98: Technology Trends
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presentation slides - Texas A&M University

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