Nano-Lithography - KTH
Nano-Lithography - KTH
Nano-Lithography - KTH
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Reduce resolution factor k 1<br />
Amplitude<br />
at Mask<br />
Normal Mask<br />
Phase Shift Mask<br />
R<br />
=<br />
d<br />
180° Phase Shift<br />
=<br />
k<br />
1<br />
λ<br />
NA<br />
λ<br />
2 −1<br />
( n )<br />
Amplitude<br />
at Wafer<br />
Intensity<br />
at Wafer<br />
• Different implementations on mask<br />
• Pattern dependent<br />
•k 1 can be reduced up to 40 %<br />
Per-Erik Hellstöm, Docent Lecture 14 th of February 2006<br />
14
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