Nano-Lithography - KTH
Nano-Lithography - KTH
Nano-Lithography - KTH
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Reduce resolution factor k 1<br />
Resist chemistry<br />
436, 365 nm: Photo-Active-Component (PAC)<br />
248,193 nm: Photo-Acid-Generator (PAG)<br />
R<br />
=<br />
k<br />
1<br />
λ<br />
NA<br />
Mask design and<br />
resist process<br />
Contrast<br />
436, 365 nm: γ=2-3, (Q f /Q 0 ≈2.5)<br />
248,193 nm: γ=5-10 (Q f /Q 0 ≈1.3)<br />
λ [nm]<br />
436<br />
365<br />
248<br />
193<br />
k 1<br />
0.8<br />
0.6<br />
0.3-0.4<br />
0.3-0.4<br />
Per-Erik Hellstöm, Docent Lecture 14 th of February 2006<br />
15
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