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Sensors and Methods for Mobile Robot Positioning

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58 Part I <strong>Sensors</strong> <strong>for</strong> <strong>Mobile</strong> <strong>Robot</strong> <strong>Positioning</strong><br />

Fe<br />

Indium<br />

arsenide<br />

Fe<br />

Fe Indium<br />

arsenide<br />

Figure 2.25: A pair of indium-arsenide-ferrite Hall-effect sensors (one<br />

shown) are positioned between flux concentrating wings of mumetal in<br />

this early Motorola prototype. (Adapted from [Wiley, 1964].)<br />

Fe<br />

sensed magnetic heading. Excellent response linearity was reported down to flux densities of 0.001<br />

Gauss [Willey, 1962].<br />

Maenaka et al. [1990] report on the development of a monolithic silicon magnetic compass at the<br />

Toyohashi University of Technology in Japan, based on two orthogonal Hall-effect sensors. Their use<br />

of the terminology “magnetic compass” is perhaps an un<strong>for</strong>tunate misnomer in that the prototype<br />

device was tested with an external field of 1,000 Gauss. Contrast this with the strength of the earth’s<br />

magnetic field, which varies from only about 0.1 Gauss at the equator to about 0.9 Gauss at the poles.<br />

Silicon-based Hall-effect sensors have a lower sensitivity limit of around 10 Gauss [Lenz, 1990]. It<br />

is likely the Toyohashi University device was intended <strong>for</strong> other than geomagnetic applications, such<br />

as remote position sensing of rotating mechanical assemblies.<br />

This prototype Hall-effect magnetometer is still of interest in that it represents a fully selfcontained<br />

implementation of a two-axis magnetometer in integrated circuit <strong>for</strong>m. Two vertical Hall<br />

cells [Maenaka et al., 1987] are arranged at right angles (see Figure 2.25) on a 4.7 mm² chip, with<br />

their respective outputs coupled to a companion signal processing IC of identical size. (Two separate<br />

chips were fabricated <strong>for</strong> the prototype instead of a single integrated unit to enhance production<br />

yield.) The sensor <strong>and</strong> signal processing ICs are interconnected (along with some external variable<br />

resistors <strong>for</strong> calibration purposes) on a glass-epoxy printed circuit board.<br />

The dedicated signal-processing circuitry converts the B-field components B x <strong>and</strong> B y measured by<br />

the Hall sensors into an angle 2 by means of the analog operation [Maenaka et al., 1990]:<br />

2 ' arctan B x<br />

B y<br />

(2.15)<br />

where<br />

2 = angle between B-field axis <strong>and</strong> sensor<br />

B x = x-component of B-field<br />

B y = y-component of B-field.<br />

The analog output of the signal-processing IC is a DC voltage which varies linearly with vector<br />

orientation of the ambient magnetic field in a plane parallel to the chip surface. Reported test results<br />

show a fairly straight-line response (i.e., ± 2 percent full scale) <strong>for</strong> external field strengths ranging<br />

from 8,000 Gauss down to 500 Gauss; below this level per<strong>for</strong>mance begins to degrade rapidly<br />

[Maenaka et al., 1990]. A second analog output on the IC provides an indication of the absolute value<br />

of field intensity.

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