n-GaAs - Electronics Technology Network

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eflection (arb. units) reflection (arb. units) N-GaAs: model & experiment 1.1 1.0 0.9 0.8 0.7 3.6um, 4.0um, n=3.80E14 n=5.00E14 4.0um, n=1.38E16 n=1.7E16 2.0um, n=1.00E17 n=1.50E17 2.0um, n=1.55E18 n=1.8E18 0.6 0.5 0.4 0.0 1.0 2.0 3.0 4.0 5.0 frequency [THz]
n-doping (THz data) Comparison of THz and standard method 1E19 1E18 N-GaAs Thickness: 2-4 m Substrate: undoped GaAs 1E17 1E16 1E15 min. max. 1E14 1E14 1E15 1E16 1E17 1E18 1E19 n-doping (Hall data) Usable range: Doping fitting: 1e16 – 5e18 cm -3 Mobility fittting: 1e16 – 5e17 cm -3
Page 1 and 2: THz wave probe for semiconductor wa
Page 3 and 4: Why THz based system Van der Pauw m
Page 5 and 6: Models of relevant structures THz m
Page 7 and 8: Talk outline • Why THz waves base
Page 9: Semiconductor scanner hardware 90cm
Page 13 and 14: HEMT measurement Heterostructure us
Page 15 and 16: carrier sheet density (THz data) Su
Page 17 and 18: Ellipsometry & THz waves p p s s po
Page 19 and 20: Ellipsometry & THz waves ellipsomet
Page 21 and 22: Talk outline • Why THz waves base
Page 23 and 24: THz interferometer Schematic drawin
Page 25 and 26: Lehighton Electronics, Inc. (PA) LE
Page 27: Those who contributed scanner team

n-GaAs - Electronics Technology Network

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