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n-GaAs - Electronics Technology Network

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HEMT measurement<br />

Heterostructure used:<br />

n+ <strong>GaAs</strong> cap (5 nm)<br />

Al 0.3 Ga 0.7 As (150nm)<br />

undoped <strong>GaAs</strong><br />

undoped <strong>GaAs</strong> substrate

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