n-GaAs - Electronics Technology Network

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carrier density (10 18 /cm 3 ) Ellipsometry demonstration 3.0 2.5 2.0 1.5 standard THz-TDS THz ellipsometry - tests on epitaxial layers (n-GaAs) - tests on heterostructure samples (2DEG) pHEMT (InGaAs/InP) AlGaAs/GaAs (MODFET) 1.0 0.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Hall carrier density (10 18 /cm 3 )
Talk outline • Why THz waves based system • Principles of operation • Proof of principle • Ellipsometry with THz waves • Interferometry with THz wave (homogeneity mapping)
Page 1 and 2: THz wave probe for semiconductor wa
Page 3 and 4: Why THz based system Van der Pauw m
Page 5 and 6: Models of relevant structures THz m
Page 7 and 8: Talk outline • Why THz waves base
Page 9 and 10: Semiconductor scanner hardware 90cm
Page 11 and 12: n-doping (THz data) Comparison of T
Page 13 and 14: HEMT measurement Heterostructure us
Page 15 and 16: carrier sheet density (THz data) Su
Page 17 and 18: Ellipsometry & THz waves p p s s po
Page 19: Ellipsometry & THz waves ellipsomet
Page 23 and 24: THz interferometer Schematic drawin
Page 25 and 26: Lehighton Electronics, Inc. (PA) LE
Page 27: Those who contributed scanner team

n-GaAs - Electronics Technology Network

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