n-GaAs - Electronics Technology Network

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Parameters homogeneity map 4x10 11 3x10 11 AlGaAs/GaAs based 2DEG map of 2DEG density scanned area: 16x16 mm step size: 0.5 mm 2x10 11 4x10 11 3x10 11 2x10 11 AlGaAs/GaAs based 2DEG Map of 2DEG density after treatment (sample subjected to surface oxidation) Scanner area: 16x16 mm Step size: 0.25 mm 1x10 11
Lehighton Electronics, Inc. (PA) LEI 1600/1605 – contactless alternative to Hall measurement ( 10 GHz microwave technology) LEI 1500/1510 – resistivity mapping (Eddy current measurement) RS300/LEI 88 – sheet resistivity LEI 1600 LEI 1500 RS 300 LEI 1605 LEI 1510 LEI88
Page 1 and 2: THz wave probe for semiconductor wa
Page 3 and 4: Why THz based system Van der Pauw m
Page 5 and 6: Models of relevant structures THz m
Page 7 and 8: Talk outline • Why THz waves base
Page 9 and 10: Semiconductor scanner hardware 90cm
Page 11 and 12: n-doping (THz data) Comparison of T
Page 13 and 14: HEMT measurement Heterostructure us
Page 15 and 16: carrier sheet density (THz data) Su
Page 17 and 18: Ellipsometry & THz waves p p s s po
Page 19 and 20: Ellipsometry & THz waves ellipsomet
Page 21 and 22: Talk outline • Why THz waves base
Page 23: THz interferometer Schematic drawin
Page 27: Those who contributed scanner team

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