n-GaAs - Electronics Technology Network

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phase shift (rad) amplitude attenuation (1/m) THz model of semiconductor 1.00 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 0.55 0.50 0.45 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 rn_<strong>GaAs</strong> 5e15 5e16 5e17 5e18 rn_<strong>GaAs</strong> 1 2 3 4 5 6 7 8 5e16 5e16 frequency 5e17 (THz) 5e18 1 2 3 4 5 6 7 8 frequency (THz) 10 8 6 4 2 0 1.0 0.5 5e17 5e18 5e16 5e17 5e15 0.0 0 1 2 3 4 5 6 7 8 frequency (THz) Summary: Multicolour measurement: un-ambiguous recognition (slow) Two/three colour measurement: distinguishable, fast One colour measurement: Could be confusing, needs calibration
Talk outline • Why THz waves based system • Principles of operation • Proof of principle • Ellipsometry with THz waves • Interferometry with THz wave (homogeneity mapping)
Page 1 and 2: THz wave probe for semiconductor wa
Page 3 and 4: Why THz based system Van der Pauw m
Page 5: Models of relevant structures THz m
Page 9 and 10: Semiconductor scanner hardware 90cm
Page 11 and 12: n-doping (THz data) Comparison of T
Page 13 and 14: HEMT measurement Heterostructure us
Page 15 and 16: carrier sheet density (THz data) Su
Page 17 and 18: Ellipsometry & THz waves p p s s po
Page 19 and 20: Ellipsometry & THz waves ellipsomet
Page 21 and 22: Talk outline • Why THz waves base
Page 23 and 24: THz interferometer Schematic drawin
Page 25 and 26: Lehighton Electronics, Inc. (PA) LE
Page 27: Those who contributed scanner team

n-GaAs - Electronics Technology Network

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