n-GaAs - Electronics Technology Network

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Summary • semiconductor scanner demonstrator is built and tested on epitaxial layers • potential of ellipsometry for THz wave probe evaluated • spatial mapping of elecrical parameters with THz wave probe is demontrated
Those who contributed scanner team D. Dietze, T. Prikoszowitch, P. Kelly, and K. Unterrainer Institute for Photonics, Vienna University of <strong>Technology</strong>, Austria fs-oscillator with PhC fiber delivery team T. Le and A. Stingl Femtolasers Produktions GmbH, Austria
Page 1 and 2: THz wave probe for semiconductor wa
Page 3 and 4: Why THz based system Van der Pauw m
Page 5 and 6: Models of relevant structures THz m
Page 7 and 8: Talk outline • Why THz waves base
Page 9 and 10: Semiconductor scanner hardware 90cm
Page 11 and 12: n-doping (THz data) Comparison of T
Page 13 and 14: HEMT measurement Heterostructure us
Page 15 and 16: carrier sheet density (THz data) Su
Page 17 and 18: Ellipsometry & THz waves p p s s po
Page 19 and 20: Ellipsometry & THz waves ellipsomet
Page 21 and 22: Talk outline • Why THz waves base
Page 23 and 24: THz interferometer Schematic drawin
Page 25: Lehighton Electronics, Inc. (PA) LE

n-GaAs - Electronics Technology Network

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