n-GaAs - Electronics Technology Network
n-GaAs - Electronics Technology Network
n-GaAs - Electronics Technology Network
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Ellipsometry & THz waves<br />
ellipsometric angle D<br />
200<br />
195<br />
190<br />
185<br />
180<br />
175<br />
170<br />
Al<strong>GaAs</strong>/<strong>GaAs</strong><br />
2.90<br />
3.00<br />
3.10<br />
3.20<br />
3.30<br />
ellipsometric angle D<br />
200<br />
195<br />
190<br />
185<br />
180<br />
175<br />
170<br />
Al<strong>GaAs</strong>/<strong>GaAs</strong><br />
=<br />
0.000<br />
0.005<br />
0.010<br />
0.020<br />
165<br />
160<br />
lambda<br />
thickness<br />
0.20 0.25 0.30 0.35 0.40<br />
ellipsometric angle y<br />
Heteroepitaxy case:<br />
• high sensitivity to composition and doping<br />
• high sensitivity to 2DEG presence<br />
(anisotropy)<br />
Homoepitaxy case:<br />
• higher sensitivity for highly doped (strongly<br />
absorbing) layers<br />
ellipsometric angle D<br />
165<br />
160<br />
185<br />
180<br />
175<br />
0.20 0.25 0.30 0.35 0.40<br />
plain <strong>GaAs</strong><br />
ellipsometric angle y<br />
<strong>GaAs</strong>/<strong>GaAs</strong><br />
=<br />
0.05<br />
0.01<br />
0.02<br />
170<br />
0.30 0.35 0.40<br />
ellipsometric angle y
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