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QUALITY and RELIABILITY II In·Process Quality Inspection (FA B) 1. Manufacturing Section Process Step Process Control Insp. Frequency Oxidation Oxide Thickness All Lots Di'ffusion Oxide Thickness All Lots Sheet Resistance All Lots Visual All Lots Photo Critical Dimension All Lots (MOS) Visual All Lots Mask Clean Inspection All Masks with Spot Light (MOS) or Microscope (BIP) Etch Critical Dimension All Lots Visual All Wafers Thin Film Metal Thickness All Lots Visual All Lots Ion Implant Sheet Resistance All Lots (Test Wafer) Low Temp. Thickness All Lots Oxide Visual All Lots E·Test Electrical Characteristics All Lots Fab. Out Visual All Wafers 2. FAB, QC Monitor/Gate Process Step FAB, QC Insp. Frequency Oxidation Oxide Thickness Once/Shift C·V Test on Tubes Once/10 Days and After CLN Visual Once/Shift Diffusion Oxide Thickness Once/Shift C-V Test on Tubes Once/10 Days and After CLN Visual Once/Shift Photo Critical Dimension All Lots (MOS) Visual Once/Shift Mask CLN Inspection All Masks After 10 Times Use Etch Critical Dimension All Lots (MOS) Visual All Lots Thin Film C-V Test on Tubes Once/10 Days and After CLN on Lots Once/Shift Reflectivity Once/Shift Low Temp. Refractive Index, 1 Test Wafer/Lot Oxide Wt% of Phosphorus 1 Test Wafer/Lot Visual 1 Test Wafer/Lot E·Test Measuring Data All Lots Calibration Instrument for Thickness Once/week and C.D. Measuring c8SAMSUNG 27
QUALITY and RELIABILITY 3. Photo/Etch process quality control Process Flow Proces·s Step MFG. Control Item QC Monitor/Gate Prebake Oven PM, Temperature Oven Particle Temp. Time N2 Flow Rate Photo Resist (PR) -spin Thickness Machine PM Soft Bake Oven PM, Temperature Temp. N2 Flow Rate Time Align/Expose Light Uniformity Light Intensity Alignment, Focus Test Mask Clean Insp. Mask Clean Inspection Mask Clean Exposure Light Intensity Develop Equipment PM Vacuum Solution Control Develop Check PR/C.D.'S Alignment Particles Mask and Resist Defects QC Inspection Critical Dimension (CD) Hard Bake Oven PM, Temperature Temp. Time N2 Flow Rate Etch Etch rate, Equipment Etchant Temp. PM & Settings, Etch Etch Rate Time to Clear Inspection PR Strip Ov'er/Under Machine·PM Final Check QC Inspection Note: PM-FepFesents PreveFttive-Malntenance------ C.D.'S Over and under Etch, Particles, PR Residue, Defects, Scratches Same as Final Check, However, More Intense on limited Sample Basis. (AQL 6.5%) 4. Reliability·related Interlayer Dielectric, Metallization, and Passivation Process Quality Control Monitor Item Wt% Phosphorus Content of the Dielectric Glass Metallization Interconnect AI Step Coverage Metallization Reflectivity Passivation Thickness and Composition Thin Film Defect Density Frequency 1/Shift 1/Month 1/Month 1/Shift 1/Shift 1/Shift c8SAMSUNG 28
Page 1 and 2: c8 SAMSUNG MOS Products Data Book 1
Page 3 and 4: QUALITY and RELIABILITY Table 1. Re
Page 5 and 6: QUALITY and RELIABILITY Table 2. Fa
Page 7 and 8: QUALITY and RELIABILITY ACCELERATED
Page 9 and 10: QUALITY and RELIABILITY Some words
Page 11 and 12: QUALITY and RELIABILITY Process Mon
Page 13: QUALITY and RELIABILITY 3.1 WAFER F
Page 17 and 18: QUALITY and RELIABILITY Figure 9. G
Page 19 and 20: QUALITY and RELIABILITY 6. Seal Ins
Page 21 and 22: QUALITY and RELIABILITY 3. In·Proc
Page 23 and 24: - QUALITY and RELIABILITY Figure 10
Page 25 and 26: ~. QUALITY and RELIABILITY Figure 1
Page 27 and 28: NOTES
Page 29 and 30: ----_.._---
Page 31 and 32: PRODUCT GUIDE E Calculator ICs Devi
Page 33 and 34: PRODUCT GUIDE 4 3. ORDERING INFORMA
Page 35 and 36: CMOS LCD Watch ICs Device Function
Page 37 and 38: KS5112 CMOS DIGITAL INTEGRATED CIRC
Page 65 and 66:
KS5190 CMOS DIGITAL INTEGRATED CIRC
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KS5199A CMOS DIGITAL INTEGRATED CIR
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~ - KS5209 CMOS DIGITAL INTEGRATED
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K5521 0 CMOS DIGITAL INTEGRATED CIR
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KS521 0 CMOS DIGITAL INTEGRATED CIR
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Calculator ICs Device Function Pack
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KS602,5 CMOS DIGITAL INTEGRATED CIR
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KS6026 APPLICATION CMOS DIGITAL INT
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KS6027 AlBIC CMOS DIGITAL INTEGRATE
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KS6027 AlBIC CMOS DIGITAL INTEGRATE
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---------- - - _____ _____ n _____
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KS6027B CMOS DIGITAL INTEGRATED CIR
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KS60278 CMOS DIGITAL INTEGRATED CIR
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KS6027C CMOS DIGITAL INTEGRATED CIR
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KS6027C CMOS DIGITAL INTEGRATED CIR
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~~ KS6027C CMOS DIGITAL INTEGRATED
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NOTES
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VOICE SYNTHESIZER APPLICATION GUIDE
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db ~ 3: CJ) c: z c;) KS5901A APPLIC
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-- KS5901A CMOS DIGITAL INTEGRATED
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-------------~ KS5901A CMOS DIGITAL
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------------------- KS5901A CMOS DI
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----~-----------~--~- ~---~~-- ----
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KS5902XX CMOS DIGITAL INTEGRATED CI
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~ KS5911 CMOS DIGITAL INTEGRATED CI
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---~ KS5911 CMOS DIGITAL INTEGRATED
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--------- ______ ~ ______ -_0_.__--
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~ MELODY/MISCELLANEOUS ICs 6
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KS5381 CMOS DIGITAL IC MULTI MELODY
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KS5381 CMOS DIGITAL IC BATTERY OPER
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KS5381 CMOS DIGITAL IC MELODY OPERA
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KS5381 CMOS DIGITAL IC PAD DIAGRAM
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KS5381 CMOS DIGITAL IC 2. PACKAGJ:
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------------~--------- KS5116 CMOS
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1--. ------29-30sec KS5116 CMOS DIG
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PACKAGE DIMENSIONS 8 DIP Unit: mm 1
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PACKAGE DIMENSIONS 40 DIP Unit: mm
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SALES OFFICES/MANUF ACTURER' S REPR
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SALES OFFICES/MANUFACTURER'S REPRES
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SALES OFFICES/MANUFACTURER'S REPRES
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c8 SAMSUNG Electronics Semiconducto
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