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QUALITY and RELIABILITY 4. Outgoing quality inspection plan (LTPD) Defect Class Discrete LSI Kind <strong>of</strong> Defect II Critical Defect electrical 1% 2% visual Major Open, short Wrong configuration, no marking Defect electrical 1.5% 3% Items which affect reliability most strongly visual Minor Defect Items which minimally or do electrical 2% 5% not affect reliability at all visual (cosmetic, appearance, etc.) c8SAMSUNG 35
- QUALITY and RELIABILITY Figure 10. General Assembly Flow Process Flow Process Step Major Control Item Wafer Wafer Incoming Q.C. Wafer Incoming Inspection AQL 4.0% Inspection Tape Mount Sawing Q.C. Monitor Visual Inspection Q.C. Monitoring: - Chip·out - Scratch - Crack - Sawing Discoloration - Sawing·speed - Cut Count - 0.1. Purity - CO2 Bubble Purity 100% Screen: - FAB Defect - EDS Test Defect - Sawing & Scratch Defect Q.C. Gate 1st AQL 1.0% Reinspection AQL: 0.65% Lead Frame (UF) Lead Frame Incoming R> Die Attach (D/A) Q.C. Monitor ~.-----1--------.--I-----~---~~---~-- ~ 1-- ~- *Q.C.UF Incoming Inspection 1. Acceptance Quality Level - Dimension LTPD 20%, C=O - Visual & Mechanical: LTPD 10%, C=2 - Functional Work Test: LTPD 20%, C=O *Q.C.D/A Monitor Inspection 1. Bond force 2. Frequency: 4 Times/Station/Shift 3. Sample: 24 ea Time 4. Acceptance Criteria --~------~-- ------- -------- ~------------ Defect Acceptance Reject Critical 0 1 Major 1 2 --- Yl Cure c8SAMSUNG 36
Page 1 and 2: c8 SAMSUNG MOS Products Data Book 1
Page 3 and 4: QUALITY and RELIABILITY Table 1. Re
Page 5 and 6: QUALITY and RELIABILITY Table 2. Fa
Page 7 and 8: QUALITY and RELIABILITY ACCELERATED
Page 9 and 10: QUALITY and RELIABILITY Some words
Page 11 and 12: QUALITY and RELIABILITY Process Mon
Page 13 and 14: QUALITY and RELIABILITY 3.1 WAFER F
Page 15 and 16: QUALITY and RELIABILITY 3. Photo/Et
Page 17 and 18: QUALITY and RELIABILITY Figure 9. G
Page 19 and 20: QUALITY and RELIABILITY 6. Seal Ins
Page 21: QUALITY and RELIABILITY 3. In·Proc
Page 25 and 26: ~. QUALITY and RELIABILITY Figure 1
Page 27 and 28: NOTES
Page 29 and 30: ----_.._---
Page 31 and 32: PRODUCT GUIDE E Calculator ICs Devi
Page 33 and 34: PRODUCT GUIDE 4 3. ORDERING INFORMA
Page 35 and 36: CMOS LCD Watch ICs Device Function
Page 37 and 38: KS5112 CMOS DIGITAL INTEGRATED CIRC
Page 71 and 72: KS5199A CMOS DIGITAL INTEGRATED CIR
Page 73 and 74:
KS5198 CMOS DIGITAL INTEGRATED CIRC
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KS5199A CMOS DIGITAL INTEGRATED CIR
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~ - KS5209 CMOS DIGITAL INTEGRATED
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K5521 0 CMOS DIGITAL INTEGRATED CIR
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KS521 0 CMOS DIGITAL INTEGRATED CIR
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Calculator ICs Device Function Pack
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KS602,5 CMOS DIGITAL INTEGRATED CIR
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KS6026 APPLICATION CMOS DIGITAL INT
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KS6027 AlBIC CMOS DIGITAL INTEGRATE
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KS6027 AlBIC CMOS DIGITAL INTEGRATE
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---------- - - _____ _____ n _____
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KS6027B CMOS DIGITAL INTEGRATED CIR
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KS60278 CMOS DIGITAL INTEGRATED CIR
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KS6027C CMOS DIGITAL INTEGRATED CIR
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KS6027C CMOS DIGITAL INTEGRATED CIR
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~~ KS6027C CMOS DIGITAL INTEGRATED
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NOTES
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VOICE SYNTHESIZER APPLICATION GUIDE
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db ~ 3: CJ) c: z c;) KS5901A APPLIC
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-- KS5901A CMOS DIGITAL INTEGRATED
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-------------~ KS5901A CMOS DIGITAL
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------------------- KS5901A CMOS DI
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----~-----------~--~- ~---~~-- ----
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KS5902XX CMOS DIGITAL INTEGRATED CI
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~ KS5911 CMOS DIGITAL INTEGRATED CI
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---~ KS5911 CMOS DIGITAL INTEGRATED
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--------- ______ ~ ______ -_0_.__--
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~ MELODY/MISCELLANEOUS ICs 6
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KS5381 CMOS DIGITAL IC MULTI MELODY
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KS5381 CMOS DIGITAL IC BATTERY OPER
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KS5381 CMOS DIGITAL IC MELODY OPERA
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KS5381 CMOS DIGITAL IC PAD DIAGRAM
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KS5381 CMOS DIGITAL IC 2. PACKAGJ:
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------------~--------- KS5116 CMOS
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1--. ------29-30sec KS5116 CMOS DIG
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PACKAGE DIMENSIONS 8 DIP Unit: mm 1
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PACKAGE DIMENSIONS 40 DIP Unit: mm
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SALES OFFICES/MANUF ACTURER' S REPR
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SALES OFFICES/MANUFACTURER'S REPRES
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SALES OFFICES/MANUFACTURER'S REPRES
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c8 SAMSUNG Electronics Semiconducto
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