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QUALITY and RELIABILITY<br />

2.3 FUNDAMENTAL THEORY FOR ACCELERATED TESTING<br />

Accelerated life testing is powerful because <strong>of</strong> its strong relation to failure physics. The Arrhenius model, which<br />

is generally used for failure modelling, is explained below.<br />

II<br />

Arrhenius model<br />

This model can be applied to accelerated Operating Life Tests and uses absolute (Kelvin) temperatures.<br />

L=A+EalK·Tj<br />

L : Lifetime<br />

A : Constant<br />

Ea : Activation Energy<br />

K : Boltzman's constant<br />

Tj : Absolute Junction temperature<br />

If Lifetimes L 1 and L2 correspond to Temperatures T1 and T2,<br />

L 1 = L2 exp [~a (T 1 1 -<br />

T~ D<br />

Lifetime(L)<br />

L1<br />

,/<br />

T2<br />

Temperature 11T (0 K -1)<br />

Actual junction temperature should always be used, and can be computed using the following relationship.<br />

Tj=Ta+(Px (jja)<br />

Where Tj = Junction temperature<br />

Ta = Ambient temperature<br />

P = Actual power consumption<br />

e ja=Junction to Ambient thermal resistance (typically 100 degrees celsius/watt for a 16·Pin DIP).<br />

Activation Energy Estimate<br />

Clearly the choice <strong>of</strong> an appropriate activation energy, Ea, is <strong>of</strong> paramount importance. The different mechanisms<br />

which could lead to circuit failure are characterized by specific activation energies whose values are published<br />

in the literature. The Arrhenius equation describes the rate <strong>of</strong> many processes responsible for the degradation<br />

and failure <strong>of</strong> electronic components. It follows that the transition <strong>of</strong> an item from an initially stable condition to<br />

a defined degraded state occurs by a thermally activated mechanism. The time for this transition is given by an<br />

equation <strong>of</strong> the form:<br />

MTBF = B EXP (EalKT)<br />

MTBF = Mean time between failures<br />

B = Temperature·independent constant<br />

MTBF can be defined as the time to suffer a device degradation. The dramatic effect <strong>of</strong> the choice <strong>of</strong> the Ea value<br />

can be seen by plotting the MTBF equation. The acceleration effect for a 125°C device junction stress with respect<br />

to 70°C actual device junction operation is equal to 1000 for Ea= 1eV and 7 for Ea=0.3eV.<br />

c8 SAMSUNG 21

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