International Reactor Dosimetry File 2002 - IAEA Publications

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ecommendations found in ASTM practices E521 and E821 for the treatment of radiation damage caused by charged particles. Values of the displacement cross-section are based on ENDF/B-VI Release 5, cross-sections as processed into dpa cross-sections with the NJOY-97 code [8.2], using the Robinson analytic representation [8.3] of the Lindhard model of energy partition between atoms and electrons [8.4] and NRT recommended conversion of damage energy to displacements [8.5] with an effective displacement threshold energy of E d = 40 eV and an atomic scattering correction factor of β = 0.8. The NRT displacement equation defines the number of displacements (N d ) corresponding to a given damage energy (T d ) through the following equation: N d È0 Td < Ed ˘ Í ˙ Í ˙ ( T E T E d)= Í1 d £ d < 2 d/ b ˙ Í ˙ Í bTd ˙ 2Ed/ b £ Td
more sensitive than volume effect devices to ionization radiation effects produced by either a neutron field or a mixed neutron–gamma field. The accepted methodology is to relate the damage caused by a specific fluence of a given neutron spectrum to an equivalent fluence from a monoenergetic spectrum at a reference energy that would produce the same level of damage. 1 MeV is the reference energy used by the semiconductor radiation effects community, and the ratio of the fluence from a specific neutron with energy E to the fluence of a reference 1 MeV neutron required to cause the same level of damage is referred to as the 1 MeV(Si) damage response function. IRDF-<strong>2002</strong> response functions include the results of the calculation of silicon displacement kerma factors (displacement kerma per unit neutron fluence) as a function of neutron energy over the range 10 –10 –20 MeV. The unit of the displacement kerma factor is megaelectronvolts times millibarns (MeV·mb). Each factor can be multiplied by 3.435 × 10 –13 to convert to rad(Si)·cm 2 , or by 3.435 × 10 –19 to convert to J·m 2 /kg or Gy(Si)·m 2 . An average value of the neutron displacement kerma factor near 1 MeV is difficult to determine because of sharp neutron cross-section resonances in that energy region. To avoid these difficulties, the semiconductor radiation effects community has defined the displacement kerma of a reference 1 MeV neutron to be exactly a reference displacement kerma level of 95 MeV·mb. Values for the silicon displacement kerma are determined by calculating the total kerma and then partitioning the data into ionization and displacement fractions [8.7]. The correlation of the displacement kerma with the measured damage in many neutron fields has been confirmed with integral uncertainties no larger than 10% [8.8]. Figure 8.2 shows the neutron energy dependent silicon displacement kerma. For any given neutron spectrum, a 1 MeV(Si) equivalent fluence is derived by convoluting the displacement kerma with the neutron spectrum and dividing by 95 MeV·mb. The uncertainty in the specification of the neutron spectrum should be propagated through this convolution and used to determine the uncertainty in the resulting 1 MeV(Si) equivalent fluence. Note that the displacement kerma is considered to be a radiation effects community specified exposure metric and has no uncertainty (i.e. it represents a specified response). 8.3. GALLIUM ARSENIDE dpa (ELECTRONICS DAMAGE) The basis of the currently accepted protocol for the correlation of neutron damage effects to a neutron fluence in a GaAs semiconductor device is through the displacement kerma produced in bulk GaAs. However, this 94
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INTERNATIONAL REACTOR DOSIMETRY FIL
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TECHNICAL REPORTS SERIES No. 452 IN
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FOREWORD An accurate and complete k
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Contributing authors O. Bersillon C
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5.1. Plots of experimental data and
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1. INTRODUCTION R. Paviotti-Corcuer
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(b) (c) Pointwise data: (i) All dos
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REFERENCES TO SECTION 1 [1.1] ZIJP,
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cross-sections, and as a consequenc
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TABLE 2.1. MEASURED AND CALCULATED
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TABLE 2.2. MEASURED AND CALCULATED
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[2.24] KOBAYASHI, K., KIMURA, I., M
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from ENDF/B-VI Release 8, JEFF-3.0
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TABLE 3.1. REACTIONS FROM THE VARIO
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Fluence rate per unit energy (m -2
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TABLE 3.2. COMPARISON OF THE INTEGR
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— 10 B(n,α) 7 Li and 6 Li(n,t) 4
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TABLE 3.3. THERMAL NEUTRON CROSS-SE
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TABLE 3.4. RELATIVE STANDARD DEVIAT
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[3.14] HOLDEN, N.E., “Neutron sca
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The rigorous inclusion of all uncer
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TABLE 4.1. C/E VALUES IN THE CALIFO
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TABLE 4.3. IRDF-90.2 ( DATA IN A CA
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TABLE 4.3. IRDF-90.2 ( DATA IN A CA
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TABLE 4.4. JENDL/D-99 ( DATA IN A C
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TABLE 4.4. JENDL/D-99 ( DATA IN A C
Page 56 and 57: TABLE 4.5. UPDATED RRDF-98 ( DATA I
Page 58 and 59: REFERENCES TO SECTION 4 [4.1] KOCHE
Page 60 and 61: neutron yield substantially. Furthe
Page 62 and 63: TABLE 5.1. CROSS-SECTION EVALUATION
Page 64 and 65: TABLE 5.1. CROSS-SECTION EVALUATION
Page 66 and 67: — 58 Ni(n,2n) 57 Ni: The IRDF, JE
Page 68 and 69: — 238 U(n,γ) 239 U(β - ) 239 Np
Page 70 and 71: (i) (ii) (iii) (iv) (v) Only diagon
Page 72 and 73: TABLE 6.1. INTEGRAL CHARACTERISTICS
Page 74 and 75: TABLE 6.1. INTEGRAL CHARACTERISTICS
Page 76 and 77: TABLE 6.2. CROSS-SECTIONS IN IRDF-2
Page 84 and 85: 7. CONSISTENCY TEST OF THE CROSS-SE
Page 86 and 87: TABLE 7.1. REFERENCE NEUTRON FIELDS
Page 88 and 89: Fluence, (E) (MeV -1 ) 10 7 10 6 10
Page 90 and 91: TABLE 7.2. SPECTRUM AVERAGED DOSIME
Page 92 and 93: testing of electronic components an
Page 94 and 95: Table 7.3 details the 34 dosimetry
Page 96 and 97: 7.2. RESULTS OF CONSISTENCY TESTING
Page 98 and 99: TABLE 7.4. RATIO OF SPECTRUM AVERAG
Page 104 and 105: [7.7] SEKINE, T., MAEDA, S., AOYAMA
Page 108 and 109: 10 2 Damage (MeV· mb) 10 1 10 0 10
Page 110 and 111: 10 2 Damage (MeV· mb) 10 1 10 0 10
Page 112 and 113: 9. DECAY DATA AND ISOTOPIC ABUNDANC
Page 114 and 115: 9.1.4. Data processing The required
Page 116: Protactinium-231 is stated to have
Page 119 and 120: TABLE I.1. METROLOGY REACTIONS (ACT
Page 121 and 122: For the convenience of the metrolog
Page 123 and 124: Such approximate calculations are n
Page 125 and 126: of each neutron energy group. These
Page 127 and 128: activation rate for the product iso
Page 129 and 130: III.1. THERMAL CROSS-SECTIONS Gener
Page 131 and 132: TABLE III.1. COMPARISON OF THERMAL
Page 133 and 134: TABLE III.2. COMPARISON OF CAPTURE
Page 135 and 136: TABLE III.3. COMPARISON OF THE Q 0
Page 137 and 138: — 50 Cr: Compared with the Mughab
Page 139 and 140: REFERENCES TO APPENDIX III [III.1]
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CONTRIBUTORS TO DRAFTING AND REVIEW
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CONTRIBUTORS TO DRAFTING AND REVIEW
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