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International Reactor Dosimetry File 2002 - IAEA Publications

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10 2<br />

Damage (MeV· mb)<br />

10 1<br />

10 0<br />

10 –1 10 –10 10 –9 10 –8 10 –7 10 –6 10 –5 10 –4 10 –3 10 –2 10 –1 10 0 10 1 10 2<br />

Neutron energy (MeV)<br />

FIG. 8.5. Energy dependence of the GaAs damage function.<br />

REFERENCES TO SECTION 8<br />

[8.1] 1997 Annual Book of ASTM Standards, Vol. 12.02: Nuclear (II), Solar, and<br />

Geothermal Energy, American Society for Testing and Materials, Philadelphia,<br />

PA (1997).<br />

[8.2] MacFARLANE, R.E., MUIR, D.W., The NJOY nuclear data processing system,<br />

Version 91, Los Alamos Natl Lab., LA-12740-M, October 1994; code updated to<br />

Version 97.0 in a “Readme0” memorandum by R.E. MacFarlane dated<br />

31 October 1997 — this version of the code is distributed by the Radiation Safety<br />

Information Computational Center at Oak Ridge Natl Lab. as code package<br />

PSR-368; Version 97.45 is further updated, and is available using an update file<br />

from the web address http://t2.lanl.gov/codes/njoy97/<br />

[8.3] ROBINSON, M.T., “The energy dependence of neutron radiation damage in<br />

solids”, Nuclear Fusion <strong>Reactor</strong> (Proc. Int. Conf. Culham, UK, 1969), British<br />

Nuclear Energy Society, London (1970) 364–377.<br />

[8.4] LINDHARD, J., SCHARFF, M., SCHIØTT, H.E., Range concepts and heavy ion<br />

ranges (notes on atomic collisions, II), K. Dan. Vidensk. Selsk., Mat.-Fys. Medd.<br />

33 14 (1963).<br />

[8.5] NORGETT, M.J., ROBINSON, M.T., TORRENS, I.M., A proposed method of<br />

calculating displacement dose rates, Nucl. Eng. Des. 33 (1975) 50.<br />

[8.6] TULI, J.K., Nuclear Wallet Cards, Brookhaven Natl Lab., Upton, NY (1990).<br />

[8.7] ROGERS, V.C., HARRIS, L., Jr., STEINMAN, D.K., BRYAN, D.E., Silicon<br />

ionization and displacement kerma for neutrons from thermal to 20 MeV, IEEE<br />

Trans. Nucl. Sci. NS-22 (1975) 2326; Erratum, NS-23 (1976) 875.<br />

[8.8] SPARKS, M.H., et al., Energy dependence of neutron damage in silicon bipolar<br />

transistors, IEEE Trans. Nucl. Sci. NS-36 (1989) 1904.<br />

97

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