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IR Detectors from Vigo System - Boston Electronics Corporation

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PCI SERIES2-11 µm <strong>IR</strong> PHOTOCONDUCTORSOPTICALLY IMMERSED1E+111E+101E+9D*, cmHz1/2/WPCI-4PCI-5PCI-6PCI-91E+8PCI-10.6FEATURES- Ambient temperature operation- Time constant of 1 ns or less- Wide dynamic range- Perfect match to fast electronics- Convenient to use- Low cost- Prompt delivery- Custom design upon requestSPECIFICATIONDESCRIPTIONThe PCI-n (where n is wavelength λ op , in micrometers, to whichthe detector is optimized) series photodetectors are uncooled <strong>IR</strong>photoconductors, which have been optically immersed to highrefractive index GaAs hyperhemispherical (standard) orhemispherical (option) lenses. These devices can be optimizedfor the maximum performance anywhere within 2 to 11 µmrange. High performance and stability were achieved by using aband gap engineered (HgCdZn)Te, structures with optimizedcomposition/doping profiles and improved surface processing.Custom devices with quadrant cells, multielement arrays,specialized packages, connectors, windows and optical filtersare available on request.@20ºCCHARACTERISTICS UNITS PCI-4 PCI-5 PCI-6 PCI-9 PCI-10.6λ op µm 4 5 6 9 10.6Detectivity*:at λ peak, 20kHzat λ op, 20kHz1 2 3 4 5 6 7 8 9 10 11 12cmHz 1/2 /W >1×10 10 >8×10 9 >2.5×10 9 >5×10 8 >1×10 8>6×10 9 >4×10 9 >1×10 9 >1×10 8 >8×10 7Responsivity-Width product @λ op 1x1 mmVmm/W >600 >300 >60 >3 >1Time Constant ns

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