IR Detectors from Vigo System - Boston Electronics Corporation

PVI-4TE SERIES2-13 µm IR PHOTOVOLTAIC DETECTORSTHERMOELECTRICALLY COOLEDOPTICALLY IMMERSED1E+121E+111E+10D*, cmHz1/2/WPVI-4TE-3PVI-4TE-3.4PVI-4TE-4PVI-4TE-5PVI-4TE-6PVI-4TE-8PVI-4TE-10.61E+91E+8λ, µm2 3 4 5 6 7 8 9 10 11 12 13FEATURES- High performance in the 2-13 µm range- Fast response- No flicker noise- Convenient to use- Wide dynamic range- Compact, rugged and reliable- Low cost- Prompt delivery- Custom design upon requestSPECIFICATIONDESCRIPTIONThe PVI-4TE-n (where n is optimal wavelength (λ op ), in micrometers, towhich the detector is optimized) series photodetectors are four-stage TEcooledIR photovoltaic detectors, which have been optically immersed tohigh refractive index GaAs (or CdZnTe) hyperhemispherical (standard) orhemispherical (option) lenses. These devices can be optimized for themaximum performance anywhere within 2 to 13 µm range. Highperformance and stability were achieved by using band gap engineered(HgCdZn)Te structures of optimized doping and improved surfaceprocessing. Custom devices with quadrant cells, multielement arrays, variousimmersion lenses, windows and optical filters are available on request.Standard detectors are available in modified TO-8 packages with BaF 2windows. Other packages, windows and connectors are available uponrequest. See application notes for more details.Multiple cells connected in series are preferable for large area devices. Theyare characterized by similar D*, larger parallel resistance and lower R i.@20ºCCHARACTERISTICS UNITS PVI-4TE-3 PVI-4TE-3.4λ op µm 3 3.4 4 5 6 8 10.6Detectivity*:at λ peakcmHz 1/2 /W >1×10 12 >8×10 11 >6×10 11 >3×10 11 >6×10 10 >5×10 9 >4×10 9at λ op >8×10 11 >7×10 11 >4×10 11 >1×10 11 >4×10 10 >4×10 9 >2×10 9PVI-4TE-4 PVI-4TE-5 PVI-4TE-6 PVI-4TE-8 PVI-4TE-10.6Responsivity A/W >0.5 >0.8 >1 >1.3 >1.5 >1.5 >0.7Time constant ns ≤15 ≤15 ≤20 ≤20 ≤10 ≤7 ≤3Parallel resistance-optical areaΩ×cm 2 >30000 >2000 >800 >40 >3 >0.06 >0.05productOperating temperature K 195Acceptance angle, F/# deg, - 36, 1.62* Data sheet states minimum D* values for each detector model. Higher performance detectors can be provided upon request.See application notes for more details.TypeLength or diameter [mm]0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4PVI-4TE-3 O X X OPVI-4TE-3.4 O X X OPVI-4TE-4 O X X OPVI-4TE-5 O X X OPVI-4TE-6 O X X OPVI-4TE-8 X X X* PPVI-4TE-10.6 X X X* P*) Devices may require reverse bias in order to increase dynamic resistance and improve frequency response.X – unbiased standard deviceP – default with reverse biasO – detectors available on request, parameters may differ from these in data sheetsVIGO System S.A.Polandinfo@vigo.com.plAgents: Boston Electronics Corporation91 Boylston St.Brookline MA 02445 USAirdet@boselec.com www.boselec.comA.P. 25.09.2010Infrared Detectors from VIGO System S.A.