IR Detectors from Vigo System - Boston Electronics Corporation

PV-2TE SERIES1E+111E+101E+9D*, cmHz1/2/WPV-2TE-3PV-2TE-3.4PV-2TE-42-12 µm IR PHOTOVOLTAIC DETECTORSTHERMOELECTRICALLY COOLEDPV-2TE-5PV-2TE-6PV-2TE-81E+81E+7PV-2TE-10.6λ, µm2 3 4 5 6 7 8 9 10 11 12 13FEATURES- High performance in the 2-12 µm range- Fast response- No flicker noise- Convenient to use- Wide dynamic range- Compact, rugged and reliable- Low cost- Prompt delivery- Custom design upon requestSPECIFICATIONDESCRIPTIONThe PV-2TE-n (where n is optimal wavelength (λ op ), in micrometers,to which the detector is optimized) series photodetectors are two-stageTE-cooled IR photovoltaic detectors. These devices can be optimizedfor the maximum performance anywhere within 2 to 12 µm range.High performance and stability are achieved by using band gapengineered (HgCdZn)Te structures of optimized doping and improvedsurface processing. Custom devices with quadrant cells, multielementarrays, various immersion lenses, windows and optical filters areavailable on request.Standard detectors are available in modified TO-8 packages with BaF 2windows. Other packages, and connectors are available upon request.See application notes for more details.Multiple cells connected in series (PVM-2TE-n) are preferable forlarge area devices. They are characterized by similar D*, largerresistance (for better PA integration) and lower R i.@20ºCCHARACTERISTICS UNITS PV-2TE-3 PV-2TE- PV-2TE-4 PV-2TE-5 PV-2TE-6 PV-2TE-8 PV-2TEλop µm 3 3.4 4 5 6 8 10.6Detectivity*:at λ peakat λ op ≥7×10 10 ≥4×10 10 ≥3×10 10 ≥9×10 9 ≥2×10 9 ≥2×10 8 ≥1×10 8cmHz 1/2 /W ≥1×10 11 ≥6×10 10 ≥4×10 10 ≥1.5×10 10 ≥5×10 9 ≥4×10 8 ≥2×10 8Responsivity A/W ≥0.5 ≥0.8 ≥1 ≥1.3 ≥1.5 ≥0.8 ≥0.4Time Constant** ns ≤15 ≤15 ≤20 ≤20 ≤10 ≤7 ≤3Parallel resistance-opticalΩ×cm 2 ≥150 ≥3 ≥2 ≥0.1 ≥0.02 ≥0.0002 ≥0.0001area productOperating temperature K 220 to 240Acceptance angle, F/# deg, - 70, 0.87* Data sheet states minimum D* values for each detector model. Higher performance can be provided upon request.** Faster response may be achieved with high-frequency-optimized devices.See application notes for more details.TypeLength or diameter [mm]0.025 0.05 0.1 0.2 0.25 0.5 1 2 3 4PV-2TE-3 O X X O O O OPV-2TE-3.4 O X X O O O OPV-2TE-4 O X X O O O OPV-2TE-5 O X X O O OPV-2TE-6 O X X O O OPV-2TE-8 X X* PPV-2TE-10.6 X X* P*) Devices may require reverse bias in order to increase dynamic resistance and improve frequency response.X – unbiased standard device without reverse bias appliedP – default with reverse biasO – detectors available on request, parameters may vary from these in data sheetsVIGO System S.A.Polandinfo@vigo.com.plAgents: Boston Electronics Corporation91 Boylston St.Brookline MA 02445 USAirdet@boselec.com www.boselec.comA.P. 25.09.2010Infrared Detectors from VIGO System S.A.