IR Detectors from Vigo System - Boston Electronics Corporation

PCI-3TE SERIES2-14 µm IR PHOTOCONDUCTIVEDETECTORS THERMOELECTRICALLY COOLEDOPTICALLY IMMERSED1E+111E+10D*, cmHz1/2/WPCI-3TE-9PCI-3TE-10.61E+9PCI-3TE-13PCI-3TE-121E+8λ, µm1 2 3 4 5 6 7 8 9 10 11 12 13 14FEATURES- High performance in the 2-14 µm range- Fast response- Convenient to use- Wide dynamic range- Compact, rugged and reliable- Low cost- Prompt delivery- Custom design upon requestSPECIFICATIONDESCRIPTIONThe PCI-3TE-n (where n is wavelength λ op , in micrometers, to which thedetector is optimized) series photodetectors are three-stage TE-cooled IRphotoconductive detectors, which have been optically immersed to highrefractive index GaAs (or CdZnTe) hyperhemispherical (standard) orhemispherical (option) lenses. These devices can be optimized for themaximum performance anywhere within 2 to 14 µm range. Highperformance and stability were achieved by using band gap engineered(HgCdZn)Te structures of optimized doping and improved surfaceprocessing. Custom devices with quadrant cells, multielement arrays,various immersion lenses, windows and optical filters are available onrequest. Standard detectors are available in modified TO-8 packages withBaF 2 windows. Other packages, windows and connectors are availableupon request. See application notes for more details.@20ºCCHARACTERISTICS UNITS PCI-3TE-9 PCI-3TE-10.6 PCI-3TE-12 PCI-3TE-13λ op µm 9 10.6 12 13Detectivity*:at λ peak, 20kHzat λ op, 20kHzcmHz 1/2 /W ≥1.1×10 10≥6×10 9 ≥4.5×10 9≥2.5×10 9 ≥1.6×10 9≥9×10 8 ≥9×10 8≥4.5×10 8Responsivity-Width product@λ op 1×1 mmVmm/W ≥150 ≥30 ≥10 ≥5Time Constant ns